Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus

Abstract

A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

1 . A semiconductor laser device comprising;
 a first semiconductor laser device substrate including a first semiconductor laser device; and   a second semiconductor laser device substrate including a second semiconductor laser device, wherein   said second semiconductor laser device is bonded onto a first surface of said first semiconductor laser device,   a first cavity facet of said first semiconductor laser device and a second cavity facet of said second semiconductor laser device are arranged in the same plane, and   said first semiconductor laser device includes step portions on said first surface.   
     
     
         2 . The semiconductor laser device according to  claim 1 , wherein
 said step portions are formed on regions except waveguides of said first semiconductor laser device and the vicinity thereof.   
     
     
         3 . The semiconductor laser device according to  claim 1 , wherein
 said step portions extend along a direction perpendicular to an extensional direction of waveguides of said first semiconductor laser device.   
     
     
         4 . The semiconductor laser device according to  claim 1 , wherein
 said step portions are formed on both sides of waveguides of said first semiconductor laser device in a direction perpendicular to an extensional direction of said waveguides.   
     
     
         5 . The semiconductor laser device according to  claim 1 , wherein
 said second semiconductor laser device covers portions above said step portions.   
     
     
         6 . A semiconductor laser device comprising;
 a first semiconductor laser device substrate including a first semiconductor laser device; and   a second semiconductor laser device substrate including a second semiconductor laser device, wherein   said second semiconductor laser device is bonded onto a first surface of said first semiconductor laser device,   said first semiconductor laser device includes step portions on said first surface, and   said second semiconductor laser device covers portions above said step portions.   
     
     
         7 . The semiconductor laser device according to  claim 6 , wherein
 said step portions are formed on regions except waveguides of said first semiconductor laser device and the vicinity thereof.   
     
     
         8 . The semiconductor laser device according to  claim 6 , wherein
 said step portions extend along a direction perpendicular to an extensional direction of waveguides of said first semiconductor laser device.   
     
     
         9 . The semiconductor laser device according to  claim 6 , wherein
 said step portions are formed on both sides of waveguides of said first semiconductor laser device in a direction perpendicular to an extensional direction of said waveguides.   
     
     
         10 . A light apparatus comprising:
 a semiconductor laser device having a first semiconductor laser device substrate including a first semiconductor laser device and a second semiconductor laser device substrate including a second semiconductor laser device; and   an optical system controlling a light emitted from said semiconductor laser device, wherein   said second semiconductor laser device is bonded onto a first surface of said first semiconductor laser device,   a first cavity facet of said first semiconductor laser device and a second cavity facet of said second semiconductor laser device are arranged in the same plane, and   said first semiconductor laser device has step portions on said first surface.   
     
     
         11 . The light apparatus according to  claim 10 , wherein
 said step portions are formed on regions except waveguides of said first semiconductor laser device and the vicinity thereof.   
     
     
         12 . The light apparatus according to  claim 10 , wherein
 said step portions extend along a direction perpendicular to an extensional direction of waveguides of said first semiconductor laser device.   
     
     
         13 . The light apparatus according to  claim 10 , wherein
 said step portions are formed on both sides of waveguides of said first semiconductor laser device in a direction perpendicular to an extensional direction of said waveguides.   
     
     
         14 . The light apparatus according to  claim 10 , wherein
 said second semiconductor laser device covers portions above said step portions.