Method for manufacturing a semiconductor device

Abstract

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

1 . A method for manufacturing a semiconductor device comprising the steps of:
 forming a semiconductor film comprising amorphous silicon over a substrate;   forming an oxide film on the semiconductor film;   disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;   heating the semiconductor film so that the metal diffuses through the oxide film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized; and   patterning the crystallized semiconductor film to form a patterned semiconductor film including a channel region.   
     
     
         2 . The method according to  claim 1  wherein the metal is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, As and Sb. 
     
     
         3 . The method according to  claim 1  wherein the material which contains a metal is a liquid. 
     
     
         4 . The method according to  claim 1  wherein a thickness of the oxide film is 100 Å or less. 
     
     
         5 . The method according to  claim 1  wherein the oxide film is formed by oxidizing a surface of the semiconductor film. 
     
     
         6 . A method for manufacturing a semiconductor device comprising the steps of:
 forming a semiconductor film comprising amorphous silicon over a substrate;   forming an oxide film on a selected region of the semiconductor film;   disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;   heating the semiconductor film so that the metal diffuses through the oxide film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region; and   patterning the crystallized semiconductor film to form a patterned semiconductor film including a channel region,   wherein the channel region is located distant from the selected region.   
     
     
         7 . The method according to  claim 6  wherein the metal is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, As and Sb. 
     
     
         8 . The method according to  claim 6  wherein the material which contains a metal is a liquid. 
     
     
         9 . The method according to  claim 6  wherein a thickness of the oxide film is 100 Å or less. 
     
     
         10 . The method according to  claim 6  wherein the oxide film is formed by oxidizing a surface of the semiconductor film. 
     
     
         11 . A method for manufacturing a semiconductor device comprising the steps of:
 forming a semiconductor film comprising amorphous silicon on an insulating surface;   forming a silicon containing film on the semiconductor film;   disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;   heating the semiconductor film so that the metal diffuses through the silicon containing film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized; and   patterning the crystallized semiconductor film to form a patterned semiconductor film including a channel region.   
     
     
         12 . The method according to  claim 11  wherein the metal is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, As and Sb. 
     
     
         13 . The method according to  claim 11  wherein the material which contains a metal is a liquid. 
     
     
         14 . The method according to  claim 11  wherein a thickness of the silicon containing film is 100 Å or less. 
     
     
         15 . The method according to  claim 11  wherein the silicon containing film comprises silicon oxide. 
     
     
         16 . A method for manufacturing a semiconductor device comprising the steps of:
 forming a semiconductor film comprising amorphous silicon on an insulating surface;   forming a silicon containing film on a selected region of the semiconductor film;   disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;   heating the semiconductor film so that the metal diffuses through the silicon containing film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region; and   patterning the crystallized semiconductor film to form a patterned semiconductor film including a channel region,   wherein the channel region is located distant from the selected region.   
     
     
         17 . The method according to  claim 16  wherein the metal is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, As and Sb. 
     
     
         18 . The method according to  claim 16  wherein the material which contains a metal is a liquid. 
     
     
         19 . The method according to  claim 16  wherein a thickness of the silicon containing film is 100 Å or less. 
     
     
         20 . The method according to  claim 16  wherein the silicon containing film comprises silicon oxide.