US2012037886A1PendingUtilityA1

Light-emitting diode device

Assignee: HSU CHIA-LIANGPriority: Nov 13, 2007Filed: Oct 26, 2011Published: Feb 16, 2012
Est. expiryNov 13, 2027(~1.3 yrs left)· nominal 20-yr term from priority
Inventors:Chia-Liang Hsu
H10W 72/884H10W 90/00H10H 20/85H10H 20/8515H10H 20/8506H10H 20/857H10H 20/856H10H 20/855G02B 6/0031G02B 6/0025G02B 6/0073
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Claims

Abstract

A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a carrier comprising a platform;   a transparent substrate formed on the platform comprising a first surface;   a multi-LED structure, comprising:
 a first light-emitting structure formed on the first surface, comprising:
 a first first-type semiconductor layer; 
 a first second-type semiconductor layer; and 
 a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; 
 
 a second light-emitting structure formed on the first surface, comprising:
 a second first-type semiconductor layer; 
 a second second-type semiconductor layer; and 
 a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and 
 
 a connecting layer formed between the first light-emitting structure and the second light-emitting structure; 
   wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.   
     
     
         2 . The light-emitting device according to  claim 1 , wherein the angle between the first surface of the transparent substrate and the platform is 45-135 degree. 
     
     
         3 . The light-emitting device according to  claim 1 , wherein the first light-emitting structure is electrically connected to the second light-emitting structure in series. 
     
     
         4 . The light-emitting device according to  claim 1 , wherein the first light-emitting structure is electrically connected to the second light-emitting structure in parallel. 
     
     
         5 . The light-emitting device according to  claim 1 , further comprising a reflective layer between the first light-emitting structure and the second light-emitting structure. 
     
     
         6 . The light-emitting device according to  claim 1 , further comprising an adhering material adhering the transparent substrate to the platform. 
     
     
         7 . The light-emitting device according to  claim 1 , further comprising a lens positioned over the carrier. 
     
     
         8 . The light-emitting device according to  claim 1 , wherein the carrier further comprising a reflecting layer formed on the inner surface of the carrier. 
     
     
         9 . The light-emitting device according to  claim 1 , wherein the transparent substrate further comprising a phosphor material. 
     
     
         10 . The light-emitting device according to  claim 1 , wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate. 
     
     
         11 . The light-emitting device according to  claim 1 , wherein the first light-emitting structure comprises GaN series material and the second light-emitting structure comprises AlGaInP series material. 
     
     
         12 . The light-emitting device according to  claim 1 , wherein the multi-LED structure further comprises an intermediate substrate formed between the first light-emitting structure and the second light-emitting structure. 
     
     
         13 . The light-emitting device according to  claim 12 , wherein the transparent substrate and/or the intermediate substrate comprises sapphire, diamond, glass, polymer, epoxy, quartz, acrylate, ZnO, AlN, or SiC. 
     
     
         14 . The light-emitting device according to  claim 1 , wherein the multi-LED structure is separated from the platform by a predetermined distance. 
     
     
         15 . The light-emitting device according to  claim 1 , wherein the connecting layer comprises a conductive material, a semiconductor material, or a non-conductive material.

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