Method of forming an electronic device using a separation technique

Abstract

A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the semiconductor layer is a portion of the substrate.

What is claimed is: 
     
         1 . A method of forming an electronic device comprising:
 forming a first patterned layer adjacent to a first side of a substrate including a semiconductor material; and   separating a first semiconductor layer and the first patterned layer from the substrate, wherein the first semiconductor layer is a first portion of the substrate.   
     
     
         2 . The method of  claim 1 , further comprising introducing a first separation-enhancing species into the substrate at a first distance from the first side. 
     
     
         3 . The method of  claim 2 , wherein the separation-enhancing species includes hydrogen, helium, or boron. 
     
     
         4 . The method of  claim 1 , further comprising annealing the substrate and the first patterned layer. 
     
     
         5 . The method of  claim 1 , further comprising doping a first region adjacent to the first side of the substrate. 
     
     
         6 . The method of  claim 1 , wherein forming the first patterned layer comprises forming a patterned dielectric layer. 
     
     
         7 . The method of  claim 6 , wherein forming the patterned dielectric layer includes forming a dielectric region having a sidewall and a bottom, wherein the sidewall and bottom define an acute angle that is no greater than approximately 75°. 
     
     
         8 . The method of  claim 7 , further comprising forming a metallic member partly formed on the sidewall of the dielectric region. 
     
     
         9 . The method of  claim 1 , wherein forming the first patterned layer comprises forming a patterned metal layer. 
     
     
         10 . The method of  claim 9 , wherein forming the patterned metal layer comprises forming a first metallic member adjacent to the first side and electrically connected to a first doped region within the substrate. 
     
     
         11 . The method of  claim 9 , further including introducing a first separation-enhancing species into the substrate at a first distance from the first side during or after forming the patterned metal layer. 
     
     
         12 . The method of  claim 11 , wherein incorporating the first separation-enhancing species comprises:
 incorporating hydrogen into the first patterned metal layer; and   moving the hydrogen from the first patterned metal layer into the substrate.   
     
     
         13 . The method of  claim 12 , wherein forming the first patterned metal layer is performed using an acidic solution as a source of hydrogen. 
     
     
         14 . The method of  claim 12 , wherein forming the first patterned metal layer and incorporating hydrogen into the first patterned metal layer occur substantially simultaneously during a particular time period. 
     
     
         15 . The method of  claim 1 , wherein separating the first semiconductor layer and the first patterned layer from the substrate comprises mechanically separating the first semiconductor layer and the first patterned layer from the substrate. 
     
     
         16 . The method of  claim 15 , wherein mechanically separating the first semiconductor layer and the first metallic layer from the substrate is performed using a wedge, a wire, or a saw, laser, or an acoustical device. 
     
     
         17 . The method of  claim 1 , wherein separating the first semiconductor layer and the first patterned layer from the substrate comprises fracturing or cleaving the substrate at substantially the first distance from the first side of the substrate. 
     
     
         18 . The method of  claim 1 , wherein the electronic device comprises a photovoltaic cell that includes the first semiconductor layer and the first metallic layer. 
     
     
         19 . A method of forming an electronic device comprising:
 forming a doped region adjacent to a side of a substrate;   forming a first patterned layer adjacent to a first side of a substrate including a semiconductor material;   plating a metal-containing layer over the patterned dielectric layer;   cooling or heating the metal-containing layer after plating the metal-containing layer, wherein a weak point is formed within the substrate as a result of cooling or heating the metal-containing layer; and   mechanically separating a first semiconductor layer, the first patterned layer, and the metal-containing layer from the substrate, wherein mechanically separating occurs adjacent to the weak point within the substrate, and the first semiconductor layer is a first portion of the substrate.   
     
     
         20 . The method of  claim 19 , wherein mechanically separating is performed using a wedge.