Semiconductor device and method for fabricating the same

Abstract

A semiconductor device and a method for fabricating the same are provided. The method includes: forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate; and forming the gate structures over the protruded patterns. The semiconductor device includes: a plurality of protruded substrate portions smaller than the gate structures; and a plurality of gate structures encompassing the protruded substrate portions. Each of the gate structures includes a gate conductive layer that extends below the top and along profiles of the corresponding protruded portion such that channels are formed on surfaces of the protruded portions.

1 .- 7 . (canceled) 
     
     
         8 . A semiconductor device, comprising:
 a plurality of protruded substrate portions, each of the protruded portions protruding upwardly from the substrate and having a first side and a second side sloping downward from a top provided there between such that each protruded portion forms a cross-sectional shape of a trapezoid; and   a plurality of gate structures encompassing the protruded substrate portions, each of the gate structures including a gate conductive layer that is wider than the corresponding protruded portion, each gate conductive layer being formed over the first side, the top, and the second side of the corresponding protruded portion so as to extend below the top of the protruded portion and along profiles of the first side, the top, and the second side of the protruded portion such that channels are formed on surfaces of the protruded substrate portion.   
     
     
         9 . The semiconductor device of  claim 8 , wherein each of the gate structures includes gate insulation layers, and a gate metal layer, and wherein each gate conductive layer includes silicon. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the protruded substrate portions are formed to have widths in a range of approximately one third to approximately two third of the widths of the gate structures.