Magnetic stack structure and manufacturing method thereof

Abstract

A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.

What is claimed is: 
     
         1 . A method of manufacturing a magnetic stack structure, comprising:
 forming a first metal layer on a substrate, and the thickness of the first metal layer is 0.1-20 nm;   forming a free layer on the first metal layer, the free layer is made of a rare earth-transition metal alloy, and the thickness of the free layer is 1-30 nm; and   forming a second metal layer on the free layer, and the thickness of the second metal layer is 0.1-20 nm.   
     
     
         2 . The method of  claim 1 , further comprising:
 annealing the magnetic stack structure under various temperatures ranging from 25-300° C.   
     
     
         3 . The method of  claim 1 , wherein the free layer is made of TbFeCo, GdFeCo or DyFeCo. 
     
     
         4 . The method of  claim 1 , wherein the first metal layer is made of Al, Mg, Ti, Ta, Pt, Pd, alloys thereof or metallic compound thereof. 
     
     
         5 . The method of  claim 1 , wherein the second metal layer is made of Al, Mg, Ti, Ta, Pt, Pd, alloys thereof or metallic compound thereof.