Producing method of semiconductor device and substrate processing apparatus

Abstract

Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates ( 1 ) in a process chamber ( 4 ), a step for supplying an oxygen-containing gas from the upstream side of the substrates ( 1 ) carried in the process chamber ( 4 ), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates ( 1 ) are placed in the process chamber ( 4 ), a step for oxidizing the substrates ( 1 ) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber ( 4 ), and a step for carrying the thus-processed substrates ( 1 ) out of the process chamber ( 4 ).

1 . A producing method of a semiconductor device, comprising:
 transferring a plurality of substrates into a processing chamber;   supplying, in a state in which an inside of the processing chamber is heated and pressure in the processing chamber is lower than atmospheric pressure, oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation; and   transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein   in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which horizontally surrounds a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber, thereby allowing the oxygen-containing gas and the hydrogen-containing gas to react with each other at the plurality of locations of the region to generate a reaction species, and the reaction species is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing.   
     
     
         2 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the reaction species is a reaction species different from H 2 O. 
     
     
         3 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the reaction species is a reaction species with a higher reactivity than H 2 O. 
     
     
         4 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the reaction species is a reaction species with a higher reactivity than O 2  and H 2 O. 
     
     
         5 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the hydrogen-containing gas is supplied through a plurality of nozzles with different lengths. 
     
     
         6 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the hydrogen-containing gas is supplied through a porous nozzle provided at a side surface thereof with at least two holes. 
     
     
         7 . A producing method of a semiconductor device, as recited in  claim 1 , wherein in the oxidation-processing, flow rates of the hydrogen-containing gas supplied from the plurality of locations are different from each other. 
     
     
         8 . A producing method of a semiconductor device, as recited in  claim 1 , wherein the oxygen-containing gas is at least one of gases selected from the group consisting of oxygen gas and nitrous oxide gas, and the hydrogen-containing gas is at least one of gases selected from the group consisting of hydrogen gas, ammonia gas and methane gas, 
     
     
         9 . A producing method of a semiconductor device as recited in  claim 1 , wherein a flow rate of the oxygen-containing gas is larger than that of the hydrogen-containing gas. 
     
     
         10 . A producing method of a semiconductor device as recited in  claim 1 , wherein in the oxidation-processing, a processing temperature is 500-1000° C. and a processing pressure is 1-1000 Pa. 
     
     
         11 . A substrate processing method comprising: transferring a plurality of substrates into a processing chamber;
 supplying, in a state in which an inside of the processing chamber is heated and pressure in the processing chamber is lower than atmospheric pressure, oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation; and   transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein   in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which horizontally surrounds a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber, thereby allowing the oxygen-containing gas and the hydrogen-containing gas to react with each other at the plurality of locations of the region to generate a reaction species, and the reaction species is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing.   
     
     
         12 . A substrate processing apparatus, comprising: a processing chamber in which a plurality of substrates are processed;
 a heating source which heats an inside of the processing chamber;   a holding tool which holds and arranges the plurality of substrates in the processing chamber;   an oxygen-containing gas supply line which supplies oxygen-containing gas into the processing chamber;   a hydrogen-containing gas supply line which supplies hydrogen-containing gas into the processing chamber;   a pressure control device which controls pressure in the processing chamber; and   a control device configured to control the heating source, the pressure control device, the oxygen-containing gas supply line and the hydrogen-containing gas supply line such that, in a state in which the inside of the processing chamber is heated and the pressure in the processing chamber is lower than atmospheric pressure, the oxygen-containing gas and the hydrogen-containing gas are supplied into the processing chamber to process the plurality of substrates by oxidation, the hydrogen-containing gas is supplied from the plurality of locations of the region which horizontally surrounds a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber, thereby allowing the oxygen-containing gas and the hydrogen-containing gas to react with each other at the plurality of locations of the region to generate a reaction species, and the reaction species is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing.   
     
     
         13 . A substrate processing apparatus as recited in  claim 12 , wherein the control device is configured to control the heating source, the pressure control device, the oxygen-containing gas supply line and the hydrogen-containing gas supply line such that, the oxygen-containing gas and the hydrogen-containing gas react with each other at the plurality of locations of the region to generate a reaction species different from H 2 O, and the reaction species different from H 2 O is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing. 
     
     
         14 . A substrate processing apparatus as recited in  claim 12 , wherein the control device is configured to control the heating source, the pressure control device, the oxygen-containing gas supply line and the hydrogen-containing gas supply line such that, the oxygen-containing gas and the hydrogen-containing gas react with each other at the plurality of locations of the region to generate a reaction species with a higher reactivity than H 2 O, and the reaction species with a higher reactivity than H 2 O is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing. 
     
     
         15 . A substrate processing apparatus as recited in  claim 12 , wherein the control device is configured to control the heating source, the pressure control device, the oxygen-containing gas supply line and the hydrogen-containing gas supply line such that, the oxygen-containing gas and the hydrogen-containing gas react with each other at the plurality of locations of the region to generate a reaction species with a higher reactivity than O 2  and H 2 O, and the reaction species with a higher reactivity than O 2  and H 2 O is supplied to the plurality of substrates from the plurality of locations of the region to perform the oxidation-processing. 
     
     
         16 . A substrate processing apparatus as recited in  claim 12 , wherein the hydrogen-containing gas supply line includes a plurality of nozzles with different lengths. 
     
     
         17 . A substrate processing apparatus as recited in  claim 12 , wherein the hydrogen-containing gas supply line includes a porous nozzle provided at a side surface thereof with at least two holes. 
     
     
         18 . A substrate processing apparatus as recited in  claim 12 , wherein the control device is configured to control the hydrogen-containing gas supply line such that, flow rates of the hydrogen-containing gas supplied from the plurality of locations are different from each other.