Fluid delivery for scanning probe microscopy

Abstract

The following invention pertains to the introduction of a gas (or fluid) around a SPM probe or Nanotool™ to control chemical activity e.g. oxygen to promote oxidation, argon to inhibit oxidation or clean dry air (CDA) to inhibit moisture to control static charging due to the action of the probe or nanotools and to provide vacuum at and around the tip and substrate area. The invention can also produce electrical current for use with active electronic devices on, in or near the body of the device. In addition by use of a fluid like water, certain oils, and other liquids in conjunction with specific tip structure either electric discharge machining can be used at the tip area on the tip itself (in conjunction with a form structure on the work piece) or on a work piece beneath the tip to shape, polish and remove material at very small scales (10 microns to 1 nm or less).

What is claimed is: 
     
         1 . A micro electromechanical systems (MEMS) device comprising:
 scanning probe microscopy (SPM) component;   an amount of an isotope disposed on the SPM component;   a circuit for collecting particles emitted from the isotope to store an accumulated charge; and   a contact formed on the circuit to provide an amount of current that can be produced from the accumulated charge.   
     
     
         2 . The MEMS device of  claim 1  wherein the amount of isotope comprises an isotopic charge emitter, wherein the accumulated charge can serve as a source for local electrical power to operate active electronic elements located on or near the MEMS device. 
     
     
         3 . The MEMS device such as in  claim 1  wherein the amount of isotope comprises a plurality of isotopic regions, each of which contains 1 microcurie or less of radioactivity. 
     
     
         4 . Any nanocavitation technique which uses an nanocavitation inducing member to image or measure the surface to which the cavitation is to interact with by a Scanning Probe Microscopy Method. 
     
     
         5 . A method of nanoelectric discharge machining in which the electric discharge tool also serves to image or measure the surface to be machined by a Scanning Probe Microscopy Method. 
     
     
         6 . The device such as recited in  claim 1  in which an integrated or external circuit monitors the charge build up which is inversely proportional to a rate of a flow of gas passing through the system to remove charge from the channels. 
     
     
         7 . Any outflow, inflow, circulating or recirculating fluid system in which a Scanning Probe Microscopy means is integrated with the fluid transfer means. 
     
     
         8 . Any outflow, inflow, circulating or recirculating fluid system in which nanomachining or surface modification by any means is conducted by a means integrated with said means. 
     
     
         9 . The device as recited in  claim 8  in which local or integrated pumps and/or valves provide for the delivery and/or control of fluids or gases. 
     
     
         10 . The device as recited in  claim 9  in which the fluid channel also functions as an active mechanical or electromechanical member. 
     
     
         11 . The device as recited in  claim 9  in which the mechanical or electromechanical members act as passive elements. 
     
     
         12 . The device as recited in  claim 9  in which the mechanical or electromechanical members act as passive elements and are activated or operated by external mechanical, vacuum, or fluid induced forces. 
     
     
         13 . The device as recited in  claim 9  in which the mechanical or electromechanical members act independently to provide new functions. 
     
     
         14 . The device as recited in  claim 9  in which the mechanical or electromechanical members act independently to provide scanning or motion for any reason in or near the plane of the cantilever. 
     
     
         15 . The device as recited in  claim 1  wherein the circuit comprises a diode or electrically similar region in close proximity to the emitted radiation. 
     
     
         16 . The device as recited in  claim 1  wherein the circuit comprises a diode formed by an intrinsic layer of diamond coupled with a doped layer of diamond. 
     
     
         17 . A system for Scanning Probe Microscopy, Nanomachining, Nanomanipulation, or multimode operation in which the mechanical, electrical, electro-optical, radiological, are changed by mechanical or electrical means. 
     
     
         18 . A system for Scanning Probe Microscopy, Nanomachining, Nanomanipulation, or multimode operation in which the modality of operation is obtained by use of mechanical members interacting with or substituting for the primary sense or interaction structure. 
     
     
         19 . The device as recited in  claim 9  in which the mechanical or electromechanical members act independently and are electrically sensed and this information or sense current or voltage used to control the movable members. 
     
     
         20 . The device as recited in  claim 9  in which the mechanical or electromechanical members act independently and are electrically sensed and this information or sense current or voltage used to obtain a particular motion or displacement of the structure the arms act on including obtaining zero displacement. 
     
     
         21 . The device in  claim 1  further comprising a plurality of layers, the layers comprising the device consist of a conductor, intrinsic diamond and a conductor as successive layers. 
     
     
         22 . The device of  claim 1  further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic diamond and a conductor as successive layers. 
     
     
         23 . The device of  claim 1  further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic diamond and a doped SiC as successive layers. 
     
     
         24 . The device of  claim 1  further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic silicon carbide and a conductor as successive layers. 
     
     
         25 . The device of  claim 1  further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic silicon carbide and doped silicon carbide as successive layers. 
     
     
         26 . The MEMS device of  claim 1  further comprising one or more fluidic channels and one or more control valves to control a flow of fluid in the one or more fluidic channels. 
     
     
         27 . The MEMS device of  claim 26  further comprising one or more movable members formed in the SPM component, at least one fluidic channel being formed in each movable member, wherein fluid flow through the at least one fluidic channel produces movement in the movable members. 
     
     
         28 . The MEMS device of  claim 27  further comprising one or more control valves to control a flow of fluid in the one or more fluidic channels. 
     
     
         29 . The MEMS device of  claim 28  further comprising one or more movable members formed in the SPM component, at least one fluidic channel being formed in a first movable member. 
     
     
         30 . The MEMS device of  claim 27  further comprising one or more control valves to control a flow of fluid in the one or more fluidic channels. 
     
     
         31 . The MEMS device as recited in  claim 1  wherein the isotope is Americium 241. 
     
     
         32 . The MEMS device as recited in  claim 1  wherein the amount of isotope is disposed in a single isotopic region on the SPM device, wherein the single isotopic region contains 1 microcurie or less of radioactivity. 
     
     
         33 . The MEMS device as recited in  claim 1  wherein the amount of isotope comprises a plurality of isotopic regions, each of which contains 1 microcurie or less of radioactivity. 
     
     
         34 . The MEMS device as recited in  claim 1  further comprising a circuit for monitoring changes in charge accumulation in the fluidic channel as the isotope is moved by fluid flow. 
     
     
         35 . The device of  claim 1  further comprising a first layer of conductive material, intrinsic diamond, and a second layer of conductive material as successive layers. 
     
     
         36 . The device of  claim 1  further comprising a layer of boron doped diamond, intrinsic diamond, and a conductor as successive layers. 
     
     
         37 . The device of  claim 1  further comprising a layer of boron doped diamond, intrinsic diamond, and doped SiC as successive layers. 
     
     
         38 . The device of  claim 1  further comprising a layer of boron doped diamond, intrinsic silicon carbide, and a conductor as successive layers. 
     
     
         39 . The device of  claim 1  further comprising a layer of boron doped diamond, intrinsic silicon carbide, and doped silicon carbide as successive layers.