US2012067856A1PendingUtilityA1
Laser irradiation apparatus, laser irradiation method, fabrication method for thin film semiconductor device and fabrication method for display apparatus
Est. expiryAug 29, 2026(~0.1 yrs left)· nominal 20-yr term from priority
H01S 3/005B23K 26/066B23K 26/0738
45
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Claims
Abstract
A laser irradiation apparatus, including: an optical system configured to form laser light of a linear cross section to be irradiated on an irradiation object; and a cutting member having a light blocking portion configured to block the laser light formed in the linear cross section by the optical system to cut the laser light so as to have a predetermined length along a line longitudinal direction; the light blocking portion having a plurality of fins provided on the light blocking portion thereof so as to fetch and absorb the laser light.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A for making a thin film semiconductor device, the method comprising the steps of:
forming laser light of a linear cross section; cutting the laser light of the linear cross section so as to have a predetermined length in a line longitudinal direction using a cutting member which has a light blocking portion configured to block the laser light; and irradiating the laser light of the predetermined length in the line longitudinal direction on a semiconductor film to crystallize the semiconductor film, wherein,
the cutting member has a plurality of fins on the light blocking portion, and
the fins are configured to fetch and absorb the laser light.
2 . A for making a display apparatus, the method comprising the steps of:
forming laser light of a linear cross section; cutting the laser light of the linear cross section so as to have a predetermined length in a line longitudinal direction using a cutting member which has a light blocking portion configured to block the laser light; and irradiating the laser light of the predetermined length in the line longitudinal direction on a semiconductor film to crystallize the semiconductor film, wherein,
the cutting member has a plurality of fins on the light blocking portion thereof, and
the fins are configured to fetch and absorb the laser light.Cited by (0)
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