Apparatus for and method of processing substrate

Abstract

A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state.

1 . A substrate processing apparatus for removing a first liquid from a substrate with said first liquid adhering thereto, comprising:
 a process chamber for receiving said substrate therein;   a liquid supply part for supplying a second liquid made of a predetermined material different from that of said first liquid to said substrate received in said process chamber, with said first liquid adhering to said substrate;   a solidifying part for solidifying said predetermined material on said substrate; and   a removing part for changing at least one of temperature and pressure in said process chamber to sublimate the solidified predetermined material, thereby removing said predetermined material from said substrate.   
     
     
         2 . The substrate processing apparatus according to  claim 1 , wherein
 said first liquid is a replacement liquid used for replacement of a remaining liquid left on said substrate after a predetermined process and having a solidification temperature lower than that of said remaining liquid.   
     
     
         3 . The substrate processing apparatus according to  claim 2 , wherein
 the solidification temperature of said replacement liquid is lower than the temperature of said predetermined material at the triple point thereof.   
     
     
         4 . The substrate processing apparatus according to  claim 1 , wherein
 the predetermined material that is liquefied is supplied from said liquid supply part toward said substrate while the pressure and temperature in said process chamber are higher than the pressure and temperature of said predetermined material at the triple point thereof.   
     
     
         5 . The substrate processing apparatus according to  claim 4 , wherein
 in an initial stage of a process period over which said liquid supply part supplies a liquid of said predetermined material to said substrate, a gas of said predetermined material is supplied to said process chamber that is hermetically closed to cause the pressure and temperature in said process chamber to be higher than the pressure and temperature of said predetermined material at the triple point thereof, thereby causing said predetermined material continuously supplied to said process chamber to adhere in a liquid phase to said substrate.   
     
     
         6 . The substrate processing apparatus according to  claim 1 , wherein
 said solidifying part is a part for cooling said predetermined material on said substrate.   
     
     
         7 . The substrate processing apparatus according to  claim 6 , wherein
 said removing part is a part for raising the temperature in said process chamber.   
     
     
         8 . The substrate processing apparatus according to  claim 7 , further comprising
 a temperature adjusting part for raising the temperature of said substrate obtained after said predetermined material is sublimated.   
     
     
         9 . The substrate processing apparatus according to  claim 1 , wherein
 said solidifying part is a part for releasing an atmosphere in said process chamber to an atmospheric environment.   
     
     
         10 . The substrate processing apparatus according to  claim 9 , wherein
 said removing part is a part for raising the temperature in said process chamber.   
     
     
         11 . The substrate processing apparatus according to  claim 10 , further comprising
 a temperature adjusting part for raising the temperature of said substrate obtained after said predetermined material is sublimated.   
     
     
         12 . The substrate processing apparatus according to  claim 1 , wherein
 said predetermined material is a material with a pressure of one atmosphere or higher at the triple point thereof.   
     
     
         13 . A method of processing a substrate to remove a first liquid from the substrate with said first liquid adhering thereto, said method comprising the steps of:
 (a) adjusting an atmosphere surrounding said substrate with said first liquid adhering thereto to an atmosphere having temperature and pressure higher than the temperature and pressure of a predetermined material at the triple point thereof;   (b) supplying a second liquid made of said predetermined material to said substrate;   (c) solidifying said predetermined material on said substrate; and   (d) changing at least one of the temperature and pressure in said process chamber to sublimate the solidified predetermined material, thereby removing said predetermined material from said substrate.   
     
     
         14 . The method according to  claim 13 , wherein
 said first liquid is a replacement liquid used for replacement of a remaining liquid left on said substrate after a predetermined process and having a solidification temperature lower than that of said remaining liquid.   
     
     
         15 . The method according to  claim 14 , wherein
 the solidification temperature of said replacement liquid is lower than the temperature of said predetermined material at the triple point thereof.