US2012074442A1PendingUtilityA1

Light emitting diode module

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Assignee: KIM YU-SIKPriority: Feb 2, 2006Filed: Dec 1, 2011Published: Mar 29, 2012
Est. expiryFeb 2, 2026(expired)· nominal 20-yr term from priority
D04D 9/00D07B 9/00H10H 20/841H10H 20/851
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Claims

Abstract

A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Claims

exact text as granted — not AI-modified
1 . A light emitting diode module comprising:
 a light emitting chip;   a phosphor layer formed of phosphor materials emitting light having a longer wavelength than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and   a reflection plate that is disposed between the light emitting chip and the phosphor layer, and that reflects light emitted from the phosphor layer,   wherein a concavo-convex pattern is formed on the surface of the reflection plate which faces the light emitting chip.   
     
     
         2 . The light emitting diode module of  1 , wherein the concavo-convex pattern is a hemispherical array or a polygonal cavity array. 
     
     
         3 . The light emitting diode module of  claim 1 , further comprising a resin layer that has a refractive index greater than the refractive index of the reflection plate and is formed between the reflection plate and the phosphor layer. 
     
     
         4 . The light emitting diode module of  claim 1 , wherein the reflection plate is formed of a material selected from the group consisting of SiO 2 , Al 2 O 3 , AlN, and ZnSe.

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