Substrate treatment method

Abstract

There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

1 . A substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, comprising the steps of:
 before feeding the chemical liquid to a predetermined area of the substrate, feeding a liquid substance having a degree of ionization lower than that of the chemical liquid to the surface of the substrate so that the liquid substance wets at least the predetermined area,   feeding the chemical liquid to the predetermined area, and   treating the substrate with the chemical liquid fed to the surface of the substrate.   
     
     
         2 . The method according to  claim 1 , wherein the liquid substance is fed to the surface of the substrate so that a surface of the liquid substance swells on the substrate due to the surface tension. 
     
     
         3 . The method according to  claim 1 , wherein an amount of the liquid substance to be fed is 50 ml or more and 300 ml or less. 
     
     
         4 . The method according to  claim 1 , wherein the substrate has a spinning speed of 0 rpm or more and 20 rpm or less during the feeding of the liquid substance. 
     
     
         5 . The method according to  claim 1 , wherein an amount of the chemical liquid to be fed is 500 ml or more and 1,500 ml or less. 
     
     
         6 . The method according to  claim 1 , wherein the substrate has a spinning speed of 300 rpm or more and 800 rpm or less during the treatment of the substrate with the chemical liquid. 
     
     
         7 . The method according to  claim 1 , wherein the liquid substance is an inert liquid which does not react with materials constituting the materials of the substrate. 
     
     
         8 . The method according to  claim 1 , wherein at least the chemical liquid is prevented from being directly brought into contact with the substrate in the predetermined area. 
     
     
         9 . The method according to  claim 1 , wherein the chemical liquid is composed of concentrated sulfuric acid in the range of 90 to 98% by weight. 
     
     
         10 . The method according to  claim 9 , wherein the concentrated sulfuric acid has a degree of ionization as high as 0.5 MΩ·cm to 20 MΩ·cm. 
     
     
         11 . The method according to  claim 1 , wherein the chemical liquid is composed of diluted hydrofluoric acid in the range of 0.0001 vol % to 0.0002 vol %. 
     
     
         12 . The method according to  claim 1 , wherein the chemical liquid includes hydrogen peroxide plus water plus any one of ammonia, diluted hydrofluoric acid, sulfuric acid, and hydrochloric acid. 
     
     
         13 . The method according to  claim 1 , wherein the liquid substance includes water plus CO 2  gas or NH 3  gas.  5   
     
     
         14 . A substrate treatment apparatus for performing treatment by feeding a chemical liquid to a surface of a substrate, comprising the steps of:
 means for feeding a liquid substance having a degree of ionization lower than that of the chemical liquid to the surface of the substrate so that the liquid substance wets at least the predetermined area before feeding the chemical liquid to a predetermined area of the substrate,   means for feeding the chemical liquid to the predetermined area, and   means for treating the substrate with the chemical liquid fed to the surface of the substrate.   
     
     
         15 . The apparatus according to  claim 14 , wherein the liquid substance is fed to the surface of the substrate so that a surface of the liquid substance swells on the substrate due to the surface tension. 
     
     
         16 . The apparatus according to  claim 14 , wherein an amount of the liquid substance to be fed is 50 ml or more and 300 ml or less. 
     
     
         17 . The apparatus according to  claim 14 , wherein the substrate has a spinning speed of 0 rpm or more and 20 rpm or less during the feeding of the liquid substance. 
     
     
         18 . The apparatus according to  claim 14 , wherein an amount of the chemical liquid to be fed is 500 ml or more and 1,500 ml or less. 
     
     
         19 . The apparatus according to  claim 14 , wherein the substrate has a spinning speed of 300 rpm or more and 800 rpm or less during the treatment of the substrate with the chemical liquid. 
     
     
         20 . The apparatus according to  claim 14 , wherein the liquid substance is an inert liquid which does not react with materials constituting the materials of the substrate. 
     
     
         21 . The apparatus according to  claim 14 , wherein at least the chemical liquid is prevented from being directly brought into contact with the substrate in the predetermined area. 
     
     
         22 . The apparatus according to  claim 14 , wherein the chemical liquid is composed of concentrated sulfuric acid in the range of 90 to 98% by weight. 
     
     
         23 . The apparatus according to  claim 22 , wherein the concentrated sulfuric acid has a degree of ionization as high as 0.5 MΩ·cm to 20 MΩ·cm. 
     
     
         24 . The apparatus according to  claim 14 , wherein the chemical liquid is composed of diluted hydrofluoric acid in the range of 0.0001 vol % to 0.0002 vol %. 
     
     
         25 . The apparatus according to  claim 14 , wherein the chemical liquid includes hydrogen peroxide plus water plus any one of ammonia, diluted hydrofluoric acid, sulfuric acid, and hydrochloric acid. 
     
     
         26 . The method according to  claim 14 , wherein the liquid substance includes water plus CO 2  gas or NH 3  gas.