Method of manufacturing organic light emitting device

Abstract

Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained.

1 . A method of manufacturing an organic light emitting device,
 the organic light emitting device comprising:   a substrate;   an anode and a cathode provided on the substrate;   a light emitting layer provided between the anode and the cathode; and   an electron injection layer provided on a side of the cathode with respect to the light emitting layer, the electron injection layer comprising an organic compound and a dopant,   the method comprising the step of forming the electron injection layer,   wherein the step of forming the electron injection layer comprises the steps of:   vaporizing in a container a dopant material as a raw material of the dopant;   causing the vaporized dopant material to pass a heated medium between the container and the substrate; and   forming the organic compound into the electron injection layer.   
     
     
         2 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein the medium is heated by energization. 
     
     
         3 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein the medium is spaced apart from the dopant material. 
     
     
         4 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein a temperature of the medium is equal to or higher than the vaporizing temperature of the dopant material under vacuum. 
     
     
         5 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein a temperature of the medium is equal to or higher than 200° C. and equal to or lower than 2000° C. 
     
     
         6 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein the medium comprises a metal. 
     
     
         7 . The method of manufacturing an organic light emitting device according to  claim 6 , wherein the metal comprises tungsten. 
     
     
         8 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein the dopant material comprises an alkali metal compound or an alkaline earth metal compound. 
     
     
         9 . The method of manufacturing an organic light emitting device according to  claim 8 , wherein the dopant material comprises cesium carbonate. 
     
     
         10 . The method of manufacturing an organic light emitting device according to  claim 1 , wherein the step of causing the vaporized dopant material to pass a heated medium comprises the step of accelerating decomposition of the dopant material.