Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device includes forming a first insulating interlayer positioned above one surface of a substrate, forming a first hole extended from the surface of the first insulating interlayer to midway of the substrate, forming a through-electrode in the first hole, forming an electro-conductive pattern positioned on the surface of the first insulating interlayer, and connected to one end of the through-electrode, making the other end of the through-electrode expose, by removing the other surface of the substrate, and forming a connection terminal connected to the other end of the through-electrode, on the other surface of the substrate.

1 . A method of manufacturing a semiconductor device comprising:
 forming a first insulating interlayer positioned above one surface of a substrate;   forming a first hole extended from the surface of said first insulating interlayer to midway of said substrate;   forming a through-electrode in said first hole;   forming an electro-conductive pattern positioned on the surface of said first insulating interlayer, and connected to one end of said through-electrode;   making the other end of said through-electrode expose, by removing the other surface of said substrate; and   forming a connection terminal connected to the other end of said through-electrode, on the other surface of said substrate.   
     
     
         2 . The method of manufacturing a semiconductor device as claimed in  claim 1 , wherein said making the other end of said through-electrode expose comprises:
 grinding the other surface of said substrate so as to not expose the other end of said through-electrode, and then by etching the other surface of said substrate, so as to expose the other end of said through-electrode.   
     
     
         3 . The method of manufacturing a semiconductor device as claimed in  claim 1 , further comprising, after forming said first insulating interlayer, and before forming said electro-conductive pattern:
 forming a second hole so as to extend through said first insulating interlayer; and   forming a connection plug in said second hole.   
     
     
         4 . The method of manufacturing a semiconductor device as claimed in  claim 3 ,
 wherein said forming said second hole, and said forming said connection plug, are conducted after said forming said through-electrode.   
     
     
         5 . The method of manufacturing a semiconductor device as claimed in  claim 1 , further comprising, before said forming said first insulating interlayer:
 forming an alignment mark positioned between said substrate and said first insulating interlayer,   wherein in both of said forming said first hole, and said forming said electro-conductive pattern, alignment is carried out by detecting said alignment mark from the above through said first insulating interlayer.