Methods for cropping a cylindrical ingot

Abstract

Methods for cropping a cylindrical ingot and, in some particular embodiments, for cropping a multicrystalline ingot such as a multicrystalline silicon ingot.

1 . A method for cropping a cylindrical ingot having a constant diameter portion, a circumference, a center and a radius extending from the center to the circumference, the method comprising:
 forming four central ingot segments, wherein the diagonal length of the cross-section of each of the ingots is about the radius of the ingot;   forming four peripheral ingot segments from a portion of the ingot that is adjacent two of the central ingot segments.   
     
     
         2 . A method as set forth in  claim 1  wherein each peripheral ingot segment extends to the circumference of the ingot. 
     
     
         3 . A method as set forth in  claim 1  wherein the four peripheral ingot segments are divided into a first section and a second section. 
     
     
         4 . A method as set forth in  claim 1  wherein the cylindrical ingot comprises silicon. 
     
     
         5 . A method as set forth in  claim 1  wherein the cylindrical ingot consists essentially of silicon. 
     
     
         6 . A method as set forth in  claim 1  wherein the cylindrical ingot is a multicrystalline crystal. 
     
     
         7 . A method as set forth in  claim 1  wherein the cylindrical ingot is a multicrystalline silicon ingot. 
     
     
         8 . A method as set forth in  claim 7  wherein the multicrystalline silicon ingot has an average nominal crystal size of from about 1 mm to about 25 mm. 
     
     
         9 . A method as set forth in  claim 7  wherein the multicrystalline silicon ingot has an average nominal crystal size of from about 5 mm to about 25 mm. 
     
     
         10 . A method as set forth in  claim 1  wherein a wire saw is used to crop the cylindrical ingot.