US2012090537A1PendingUtilityA1

Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

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Assignee: STODDARD NATHAN GPriority: Jan 20, 2006Filed: Oct 20, 2011Published: Apr 19, 2012
Est. expiryJan 20, 2026(expired)· nominal 20-yr term from priority
Inventors:Nathan Stoddard
H10F 77/1645H10F 77/703H10F 77/315H10F 71/1221H10F 71/00H10F 71/121C30B 11/14C30B 29/06Y02E10/547Y02E10/546C30B 11/00Y10S117/917C30B 11/003Y10T117/1092C30B 28/06Y02P70/50Y02E10/548Y02E10/545
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Claims

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Claims

exact text as granted — not AI-modified
1 . A system for producing a monocrystalline ingot, comprising:
 a crucible provided in a furnace, the crucible configured to receive a single seed crystal and feedstock material;   at least one heating element for heating and at least partially melting the seed crystal, and completely melting the feedstock material contained in the crucible; and   a heat exchanger for controlling heat extraction from the crucible, in order to promote growth of the monocrystalline ingot from the at least partially melted seed crystal and the feedstock material;   wherein the heat exchanger is configured to promote cooling and directional solidification of the monocrystalline ingot.   
     
     
         2 . The system of  claim 1 , wherein the crucible includes a retainer for holding the crucible in the furnace. 
     
     
         3 . The system of  claim 1 , wherein the heat exchanger is operable in a plurality of stages to control a rate of melting of the seed crystal in the crucible. 
     
     
         4 . The system of  claim 1 , further comprising a probe or thermocouple to monitor melting of the feedstock material and meltback of the seed crystal. 
     
     
         5 . The system of  claim 1 , wherein the feedstock material is a polycrystalline silicon feedstock. 
     
     
         6 . The system of  claim 1 , wherein the heat exchanger is a gas-cooled heat exchanger. 
     
     
         7 . The system of  claim 1 , further comprising a heat exchanger block for supporting the crucible. 
     
     
         8 . The system of  claim 1 , wherein a shape of the crucible is one of a rectangular, conical, or tapered shape. 
     
     
         9 . The system of  claim 1 , wherein the crucible has a seed well portion for securing the seed crystal during monocrystalline growth. 
     
     
         10 . The system of  claim 1 , further comprising a support structure provided with the crucible for controlling heat flow.

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