US2012091011A1PendingUtilityA1

Biocompatible electrode

39
Assignee: GRAHAM ANTHONY H DPriority: Nov 11, 2008Filed: Nov 10, 2009Published: Apr 19, 2012
Est. expiryNov 11, 2028(~2.3 yrs left)· nominal 20-yr term from priority
G01N 33/4836A61N 1/0551A61B 5/24
39
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Claims

Abstract

A biocompatible electrode formed from an integrated circuit, the electrode comprising: a semiconductor substrate; and an electrode layer at least partially comprising porous valve metal oxide.

Claims

exact text as granted — not AI-modified
1 . A biocompatible electrode formed from an integrated circuit, the electrode comprising:
 a semiconductor substrate; and   an electrode layer at least partially comprising porous valve metal oxide, wherein the electrode layer further comprises a noble metal coating arranged to coat at least some of the porous valve metal oxide.   
     
     
         2 . The electrode according to  claim 1 , wherein the electrode layer further comprises one of a valve metal and a valve metal alloy at least partially in contact with at least some of the porous valve metal oxide. 
     
     
         3 . The electrode according to  claim 2 , further comprising an electrical connection to the porous valve metal oxide via the one of the valve metal and a valve metal alloy. 
     
     
         4 . (canceled) 
     
     
         5 . The electrode according to  claim 1 , further comprising an electrical connection to the porous valve metal oxide via the noble metal coating. 
     
     
         6 . The electrode according to  claim 1 , farther comprising a second coating arranged to coat at least some of the noble metal coating. 
     
     
         7 . The electrode according to  claim 1 , farther comprising an insulating layer or via to one or more metal layers between the substrate and electrode layer. 
     
     
         8 . The electrode according to  claim 1 , farther comprising a barrier layer in between the insulating or substrate layers or via and the electrode layer. 
     
     
         9 . The according to  claim 1 , wherein the electrode is comprised by a complementary metal oxide semiconductor integrated circuit with the electrode layer being formed from a metallization layer of the integrated circuit comprising at least partially anodised valve metal. 
     
     
         10 . The electrode according to  claim 1 , wherein the valve metal is one of aluminium (Al), tungsten (W), titanium (Ti), tantalum (Ta), hafnium (Hf), niobium (Nb) and zirconium (Zr). 
     
     
         11 . The A multiple electrode array comprising an electrode according to  claim 1 . 
     
     
         12 . A system comprising a multiple electrode array according to  claim 11  fitted to a single or multiple well plate. 
     
     
         13 . A biosensor comprising an electrode, multiple electrode array or system according to  claim 1 . 
     
     
         14 . An electrode, multiple electrode array, system or biosensor substantially as described herein with reference to the accompanying drawings. 
     
     
         15 . A method of manufacturing a biocompatible electrode, the method comprising the steps of:
 exposing a metallization layer of an integrated circuit to an electrolyte, the metallization layer comprising one of valve metal and a valve metal alloy; and   anodising at least some of the metallization layer with the electrolyte to obtain an electrode layer comprising porous valve metal oxide.   
     
     
         16 . The method according to  claim 15 , further comprising controlling at least one of temperature and voltage during the anodising step to control at least one of volume and pore size of the resultant valve metal oxide. 
     
     
         17 . The method according to  claim 15 , further comprising controlling polyethylene glycol (PEG) concentration and acid concentration components of the electrolyte to control at least one of volume and pore size of the resultant valve metal oxide. 
     
     
         18 . The method according to any of  claim 15 , further comprising the step of etching the valve metal oxide subsequent to the anodising step. 
     
     
         19 . The method according to  claim 15 , further comprising the step of coating at least some of the electrode layer. 
     
     
         20 . The method according to  claim 19 , wherein the coating step comprises electrodeposition. 
     
     
         21 . The method according to  claim 19 , wherein the coating step comprises coating at least some of the valve metal oxide with a noble metal coating. 
     
     
         22 . The method according to any of  claim 19 , further comprising processing the coated electrode layer. 
     
     
         23 . The method according to  claim 19 , further comprising providing a second coating on at least some of the coated electrode layer. 
     
     
         24 . The method according to  claim 15 , wherein the electrolyte and etchant are the same. 
     
     
         25 . The method according to  claim 15 , wherein the integrated circuit is a complementary metal oxide semiconductor integrated circuit. 
     
     
         26 . The method according to  claim 15 , wherein the valve metal is one of aluminium (Al), tungsten (W), titanium (Ti), tantalum (Ta), hafnium (Hf), niobium (Nb) and zirconium (Zr). 
     
     
         27 . (canceled) 
     
     
         28 . The method of separating particles comprising separating the particles by means of an electrode according to  claim 1 , wherein the electrode is arranged such that the particles are adherent thereto. 
     
     
         29 . The method according to  claim 28 , wherein the particles comprise at least one of cells and proteins. 
     
     
         30 . The method according to  claim 28 , wherein the method comprises Electric Cell-Substrate Impedance Sensing (ECIS) or dielectrophoresis. 
     
     
         31 . The method according to  claim 28 , wherein the method further comprises diagnosing a disease.

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