Nickel Silicide Film

Abstract

A nickel alloy sputtering target and a nickel silicide film formed with such a target are provided and enable the formation of a thermally stable silicide (NiSi) film, scarcely causing the aggregation of films or excessive formation of silicides, having low generation of particles upon forming the sputtered film, having favorable uniformity and superior plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film). The nickel alloy sputtering target contains 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium, and remainder is nickel and inevitable impurities.

1 . A nickel silicide film produced by a process of sputtering a nickel alloy sputtering target containing 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium and in which its remainder is nickel and inevitable impurities to form a nickel alloy film on a silicon substrate, and reacting the nickel alloy film and the silicon substrate, wherein a phase change temperature of the nickel silicide film from NiSi to NiSi 2  is 750° C. or higher. 
     
     
         2 . The nickel silicide film according to  claim 1 , wherein the phase change temperature from NiSi to NiSi 2  is 800° C. or higher. 
     
     
         3 . A method of forming a nickel silicide film, comprising the steps of:
 sputtering a nickel alloy sputtering target containing 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium and in which its remainder is nickel and inevitable impurities to form a nickel alloy film on a silicon substrate; and   reacting the nickel alloy film and the silicon substrate to form a nickel silicide film such that a phase change temperature of the nickel silicide film from NiSi to NiSi 2  is 750° C. or higher.   
     
     
         4 . The method according to  claim 3 , wherein the phase change temperature from NiSi to NiSi 2  is 800° C. or higher.