Exposure mask and method for forming semiconductor device by using the same

Abstract

The present invention is the thing about exposure mask and manufacturing method of semiconductor device using the same It is the technology which forms the semiconductor device and makes the high integration possible by using the exposure mask including with the cell array having the light blocking patterns of line-shape and includes the assistant pattern assist feature, AF field of the same direction as the cell array.

1 . An exposure mask, comprising light blocking patterns in which a pattern which is identical with a cell region is extended to the outer side from the cell region. 
     
     
         2 . The exposure mask according to  claim 1 , wherein the light blocking patterns are line-shaped. 
     
     
         3 . The exposure mask according to  claim 1 , wherein the light blocking patterns partly have a different line width according to density and line width of a micro-pattern formed in the cell region on wafer. 
     
     
         4 . The exposure mask according to  claim 1 , wherein the light blocking patterns are formed with a width of 0.5-100 μm into the outer side of the cell region. 
     
     
         5 . An exposure mask, comprising
 a first exposure mask including a first pattern having a line shape and a second pattern defined by the line-shaped first pattern; and   a second exposure mask in a third pattern having a net shape and a fourth pattern defined by the net-shaped third pattern,   wherein the first pattern and the third pattern are different in length, in width, or in both from each other,   wherein the first and second exposure mask are used sequentially to transcribe first and second desired patterns on a target substrate, the first desired pattern being defined by a combination of the first and second patterns, the second desired pattern being defined by the first or second pattern.   
     
     
         6 . The exposure mask according to  claim 5 , wherein the line-shaped first pattern is a light blocking pattern and the second pattern is a light transmitting pattern. 
     
     
         7 . The exposure mask according to  claim 5 , wherein the net-shaped third pattern is a light blocking pattern and the fourth pattern is a light transmitting pattern. 
     
     
         8 . The exposure mask according to  claim 5 ,
 wherein the first exposure mask includes a first region corresponding to a cell region of the target substrate and a second region corresponding to an outer region of the target substrate, the outer region being formed outside of the cell region,   wherein the second exposure mask includes a third region corresponding to the cell region of the target substrate,   wherein the line-shaped first pattern and the second pattern are formed in the first region and the second region, and   wherein the net-shaped third pattern and the fourth pattern are formed in the third region.   
     
     
         9 . The exposure mask according to  claim 5 ,
 wherein the second exposure mask further includes a fourth region corresponding to the outer region of the target substrate; and   wherein the third pattern is formed only in the fourth region.   
     
     
         10 . The exposure mask according to  claim 5 , wherein the second exposure mask has substantially no region corresponding to the outer region of the target substrate. 
     
     
         11 . The exposure mask according to  claim 5 , wherein the line-shaped first pattern formed in the second region has a width of 0.5-100 μm.