Method of manufacturing a semiconductor device including through electrode

Abstract

The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.

1 . A method of manufacturing a semiconductor device, comprising:
 forming a hole in at least one of an insulating layer and a semiconductor layer;   forming a seed layer which leaves not covered a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and which covers the bottom surface of the hole and a second region from the predetermined position to the bottom surface of the hole; and   forming a plating layer that covers the seed layer and at least a part of the first region.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein in the step of forming the seed layer, the first region is formed by selectively removing a region of the seed layer from the opening of the hole to the predetermined position between the opening of the hole and the bottom surface of the hole after the seed layer that covers the bottom surface of the hole and the entire surface of the side wall of the hole is formed.