Plasma processing apparatus

Abstract

The present disclosure provides a plasma processing apparatus capable of improving uniformity of a process on a substrate surface. The plasma processing apparatus performs a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging annular dielectric members and metal members, all having different diameters, and by airtightly sealing gaps between the dielectric members and the metal members; gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the dielectric members and provided at the outside of the processing chamber.

1 . A plasma processing apparatus for performing a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber, the plasma processing apparatus comprising:
 a processing chamber main body having a top opening and formed in a container shape;   an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging a plurality of annular dielectric members and a plurality of metal members, all having different diameters, and by airtightly sealing gaps between the plurality of dielectric members and the plurality of metal members;   a plurality of gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and   a high frequency coil provided on an upper portion of the plurality of dielectric members and provided at the outside of the processing chamber.   
     
     
         2 . The plasma processing apparatus of  claim 1 ,
 wherein the upper lid includes a frame body having an opening airtightly sealed by the ceiling plate,   a beam member is provided at the frame body so as to traverse the opening, and   the metal members of the ceiling plate are supported by the beam member.   
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the ceiling plate is formed in a dome shape. 
     
     
         4 . The plasma processing apparatus of  claim 2 , wherein the ceiling plate is formed in a dome shape. 
     
     
         5 . The plasma processing apparatus of  claim 1 , wherein the ceiling plate is formed in a flat plate shape. 
     
     
         6 . The plasma processing apparatus of  claim 2 , wherein the ceiling plate is formed in a flat plate shape. 
     
     
         7 . The plasma processing apparatus of  claim 1 , wherein the upper lid includes a temperature control device. 
     
     
         8 . The plasma processing apparatus of  claim 2 , wherein the upper lid includes a temperature control device. 
     
     
         9 . The plasma processing apparatus of  claim 3 , wherein the upper lid includes a temperature control device. 
     
     
         10 . The plasma processing apparatus of  claim 4 , wherein the upper lid includes a temperature control device. 
     
     
         11 . The plasma processing apparatus of  claim 5 , wherein the upper lid includes a temperature control device. 
     
     
         12 . The plasma processing apparatus of  claim 6 , wherein the upper lid includes a temperature control device.