Heat-dissipating substrate

Abstract

Disclosed herein is a heat-dissipating substrate in order to improve heat-dissipating characteristics. The heat-dissipating substrate, comprising: a copper layer having a predetermined thickness; anodized insulating layers formed on upper and lower surfaces of the copper layer; and aluminum (Al) layers formed between the copper layer and the anodized insulating layer. Therefore, a heat-dissipating function of the base made of the aluminum (Al) layer and the copper (Cu) layer is improved, thereby making it possible to provide a high-output metal substrate appropriate for high-integration/high capacity electronic components.

1 . A heat-dissipating substrate, comprising:
 a copper layer having a predetermined thickness; and   anodized insulating layers formed on upper and lower surfaces of the copper layer.   
     
     
         2 . The heat-dissipating substrate as set forth in  claim 1 , further comprising aluminum (Al) layers formed between the copper layer and the anodized insulating layer. 
     
     
         3 . The heat-dissipating substrate as set forth in  claim 2 , further comprising:
 a seed layer formed on the part of anodized insulating layer; and   a metal layer formed on the seed layer.   
     
     
         4 . The heat-dissipating substrate as set forth in  claim 2 , wherein the anodized insulating layer is formed on the surface of the aluminum layer through an anodizing process. 
     
     
         5 . The heat-dissipating substrate as set forth in any one of  claim 2 , wherein the aluminum layers are formed at a thickness of 0.02 mm˜0.2 mm. 
     
     
         6 . The heat-dissipating substrate as set forth in  claim 2 , wherein the copper layer and the aluminum layers are formed at a thickness ratio of 2:2 to 3:1. 
     
     
         7 . The heat-dissipating substrate as set forth in  claim 4 , wherein the seed layer is performed by electroless plating or sputtering deposition. 
     
     
         8 . The heat-dissipating substrate as set forth in  claim 4 , wherein the metal layer is performed by wet plating or dry sputtering deposition. 
     
     
         9 . The heat-dissipating substrate as set forth in  claim 4 , wherein the seed layer is formed on the entire surface of anodized insulating layer, the metal layer is formed on the seed layer, and a part of the seed layer and the metal layer is removed by wet chemical etching, electrolytic etching or lift-off. 
     
     
         10 . A heat-dissipating substrate, comprising:
 a copper layer having a first area and second area of the upper surface or lower surface, and a predetermined thickness;   aluminum layers formed on first area of the upper surface or the lower surface; and   anodized insulatings layer formed on second area of the upper surface or the lower surface of the copper layer.   
     
     
         11 . The heat-dissipating substrate as set forth in  claim 10 , further comprising:
 a seed layer formed on the part of anodized insulating layer; and   a metal layer formed on the seed layer.   
     
     
         12 . The heat-dissipating substrate as set forth in  claim 10 , wherein the anodized insulating layer is formed on the surface of the aluminum layer through an anodizing process. 
     
     
         13 . The heat-dissipating substrate as set forth in  claim 10 , wherein the aluminum layers are formed at a thickness of 0.02 mm˜0.2 mm. 
     
     
         14 . The heat-dissipating substrate as set forth in  claim 10 , wherein the copper layer and the aluminum layers are formed at a thickness ratio of 2:2 to 3:1. 
     
     
         15 . The heat-dissipating substrate as set forth in  claim 11 , wherein the seed layer step is performed by electroless plating or sputtering deposition. 
     
     
         16 . The heat-dissipating substrate as set forth in a  claim 11 , wherein the metal layer is performed by wet plating or dry sputtering deposition. 
     
     
         17 . The heat-dissipating substrate as set forth in  claim 11 , wherein the seed layer is formed on the entire surface of anodized insulating layer, the metal layer is formed on the seed layer, and a part of the seed layer and the metal layer is removed by wet chemical etching, electrolytic etching or lift-off.