Methods for fabricating current-carrying structures using voltage switchable dielectric materials

Abstract

A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

1 . A method for fabricating a current-carrying formation, the method comprising:
 providing a first voltage switchable dielectric (VSD) material having a first characteristic voltage, the first VSD material being disposed on at least a portion of a flexible substrate;   exposing the first VSD material to a first source of ions associated with a first electrically conductive material;   creating a first voltage differential between the first source and the first VSD material, the first voltage differential being greater than the first characteristic voltage; and   depositing at least a portion of the first electrically conductive material on the first VSD material.   
     
     
         2 . The method of  claim 1 , further comprising:
 exposing the first VSD material to a second source of ions associated with a second electrically conductive material;   creating a second voltage differential between the second source and the first VSD material, the second voltage differential being greater than the first characteristic voltage;   allowing electrical current to flow from the first VSD material during application of the second voltage differential; and   depositing the second electrically conductive material on the first VSD material.   
     
     
         3 . The method of  claim 1 , further comprising:
 providing a second VSD material having a second characteristic voltage;   creating a third voltage differential between the first source and the second VSD material, the third voltage differential being greater than the second characteristic voltage; and   depositing at least one of the electrically conductive materials on the second VSD material.   
     
     
         4 . The method of  claim 1 , further comprising:
 creating a third voltage differential relative to the first-VSD material, the third voltage differential being greater than the first characteristic voltage; and   depositing the first electrically conductive material on the first VSD material while the first VSD material is subject to the third voltage differential.   
     
     
         5 . The method of  claim 1 , wherein the substrate includes any of a printed circuit board, printed wiring board, flex circuit, semiconductor wafer, smart card, or RFID tag. 
     
     
         6 . The method of  claim 1 , wherein the first electrically conductive material is deposited in a pin receptacle. 
     
     
         7 . The method of  claim 1 , wherein the first electrically conductive material is deposited in a via. 
     
     
         8 . The method of  claim 1 , wherein depositing includes electroplating. 
     
     
         9 . The method of  claim 1 , wherein depositing includes plasma depositing. 
     
     
         10 . The method of  claim 1 , wherein depositing includes using an electrostatic process. 
     
     
         11 . The method of  claim 1 , wherein depositing includes pulse plating. 
     
     
         12 . The method of  claim 1 , wherein depositing includes reverse pulse plating. 
     
     
         13 . The method of  claim 1 , further comprising polishing the first electrically conductive material. 
     
     
         14 . The method of  claim 13 , wherein polishing includes chemical-mechanical polishing. 
     
     
         15 . The method of  claim 1 , wherein the first electrically conductive material includes a magnetic material. 
     
     
         16 . The method of  claim 1 , wherein providing includes dissolving an electrode that provides the first source of ions. 
     
     
         17 . The method of  claim 1 , wherein the first electrically conductive material includes any of Au, Ag, Cu, Sn, and Al. 
     
     
         18 . The method of  claim 1 , wherein the first electrically conductive material includes Cu. 
     
     
         19 . The method of  claim 1 , wherein the first electrically conductive material includes Au. 
     
     
         20 . The method of  claim 1 , wherein depositing includes depositing on a bottom surface. 
     
     
         21 . The method of  claim 1 , wherein the first characteristic voltage is between 1 and 100 volts. 
     
     
         22 . The method of  claim 21 , wherein the first characteristic voltage is between 5 and 50 volts. 
     
     
         23 . The method of  claim 1 , further comprising masking a portion of the first VSD material such that the masked portion is not exposed to the first source of ions. 
     
     
         24 . The method of  claim 23 , wherein the first electrically conductive material is deposited on an unmasked region of the first VSD material.