US2012109287A1PendingUtilityA1

Method of electroplating a conversion electron emitting source on implant

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Assignee: SRIVASTAVA SURESH CPriority: Feb 10, 2005Filed: Dec 22, 2011Published: May 3, 2012
Est. expiryFeb 10, 2025(expired)· nominal 20-yr term from priority
A61L 31/082A61L 31/022C25D 3/32C25D 5/022C25D 5/36Y10T428/12722A61L 2420/02
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Claims

Abstract

Methods for preparing an implant coated with a conversion electron emitting source (CEES) are disclosed. The typical method includes cleaning the surface of the implant; placing the implant in an activating solution comprising hydrochloric acid to activate the surface; reducing the surface by H 2 evolution in H 2 SO 4 solution; and placing the implant in an electroplating solution that includes ions of the CEES, HCl, H 2 SO 4 , and resorcinol, gelatin, or a combination thereof. Alternatively, before tin plating, a seed layer is formed on the surface. The electroplated CEES coating can be further protected and stabilized by annealing in a heated oven, by passivation, or by being covered with a protective film. The invention also relates to a holding device for holding an implant, wherein the device selectively prevents electrodeposition on the portions of the implant contacting the device.

Claims

exact text as granted — not AI-modified
1 .- 21 . (canceled) 
     
     
         22 . An implant coated with a conversion electron emitting source prepared by
 combining tin-117m with cold tin in a solution to provide a total tin concentration in the range of 1×10 −5  to 1×10 −2  M;   converting the tin in the solution to Sn+ 2  ions with the cold tin and tin-117m ions homogeneously distributed in the solution;   immersing the implant in the solution; and   applying a current to the implant effective to cause the Sn +2  ions to electroplate the implant and provide thereon an electroplated implant that includes a deposit that contains tine-117m and cold tin,   wherein the electroplated implant provides radioactive emissions of from 0.02 mCi/mm to 10 mCi/mm.   
     
     
         23 . The implant of  claim 22 , wherein the implant comprises stainless steel,  115 Sn, a shape-memory alloy, or a combination thereof and the conversion electron emitting source comprises  117m Sn. 
     
     
         24 . A device for selectively electroplating an implant which device comprises a body having at least two elongated arms extending therefrom, wherein the outer perimeter of the device around the arms is configured to generally conform to the interior surface of the implant. 
     
     
         25 . The implant claimed in  claim 22  wherein said implant is held in said solution by a holder comprising a body having at least two elongated arms extending therefrom, wherein the outer perimeter of the device around the arms conforms to the interior surface of the implant whereby only an exterior surface of said implant is electroplated by said tin-117m. 
     
     
         26 . The device claimed in  claim 24  wherein said device is an electrical contact. 
     
     
         27 . A stent in combination with a device for selectively electroplating an exterior surface of said stent also having an interior surface comprising a central post having an exterior surface and a plurality of arms spaced from said post;
 wherein the exterior surface of said post is configured to prevent electroplating solution from contacting an interior surface of said stent.   
     
     
         28 . The combination claimed in  claim 27  wherein said device is an electrical contact.

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