Plasma processing chamber having enhanced deposition uniformity

Abstract

A plasma-enhanced substrate processing system includes a magnetic-field generation unit that can create a substantially uniform magnetic field along an axial direction in a spatial region, a processing chamber in the spatial region, and a first planar source unit that provides a deposition material. The magnetic field can produce a plasma gas in the processing chamber, which enables the deposition material to be deposited on a substrate.

1 . A plasma-enhanced substrate processing system, comprising:
 a magnetic-field generation unit configured to create a substantially uniform magnetic field along an axial direction in a spatial region;   a processing chamber in the spatial region and configured to house a first substrate; and   a first planar source unit configured to provide a deposition material, wherein the magnetic field is configured to produce a plasma gas in the processing chamber, which enables the deposition material to be deposited on the first substrate.   
     
     
         2 . The plasma-enhanced substrate processing system of  claim 1 , wherein the magnetic-field generation unit comprises an electrical coil configured to carry an electrical current therein and to produce substantially uniform magnetic field in the spatial region. 
     
     
         3 . The plasma-enhanced substrate processing system of  claim 2 , wherein the electrical coil is outside and encircles the processing chamber, and wherein the spatial region is at least partially inside the electrical coil. 
     
     
         4 . The plasma-enhanced substrate processing system of  claim 2 , wherein the electrical coil is inside the processing chamber, and wherein the spatial region is at least partially outside the electrical coil. 
     
     
         5 . The plasma-enhanced substrate processing system of  claim 1 , wherein the first planar source unit comprises a first target comprising the deposition material and a sputtering surface, wherein the magnetic field is configured to produce the plasma gas between the sputtering surface and the first substrate, wherein the deposition material is sputtered off the first target to be deposited on the first substrate via physical vapor deposition (PVD). 
     
     
         6 . The plasma-enhanced substrate processing system of  claim 1 , wherein the first planar source unit comprises a gas distribution device configured to provide the deposition material in a chemical vapor, wherein the magnetic field is configured to produce the plasma gas between the gas distribution device and the first substrate, wherein the deposition material is deposited on the first substrate in a plasma enhanced chemical vapor deposition (PECVD). 
     
     
         7 . The plasma-enhanced substrate processing system of  claim 1 , further comprising:
 a plurality of planar source units, including the first planar source unit, positioned in a first closed loop, wherein the processing chamber in the spatial region is configured to house a plurality of substrates comprising the first substrate, wherein the plurality of substrates are positioned in a second closed loop, wherein the plurality of substrates are configured to receive deposition materials from the plurality of source units.   
     
     
         8 . The plasma-enhanced substrate processing system of  claim 7 , wherein the magnetic-field generation unit comprises a plurality of permanent magnets that form a third close loop, wherein the plurality of permanent magnets in the third close loop are configured to be moved relative to the plurality of planar source units in the first closed loop. 
     
     
         9 . The plasma-enhanced substrate processing system of  claim 7 , wherein the first closed loop is inside the second closed loop. 
     
     
         10 . The plasma-enhanced substrate processing system of  claim 7 , wherein the second closed loop is inside the first closed loop. 
     
     
         11 . The plasma-enhanced substrate processing system of  claim 7 , wherein at least one of the first closed loop or the second closed loop forms a polygon when viewed in the axial direction. 
     
     
         12 . The plasma-enhanced substrate processing system of  claim 1 , wherein the first substrate is provided as or on a flexible web. 
     
     
         13 . The plasma-enhanced substrate processing system of  claim 1 , wherein the magnetic-field generation unit comprises two electrical coils configured to create a substantially uniform magnetic field along an axial direction in a spatial region between the two electrical coils. 
     
     
         14 . A plasma-enhanced substrate processing system, comprising:
 a magnetic-field generation unit configured to create a substantially uniform magnetic field along an axial direction in a spatial region;   a processing chamber in the spatial region and configured to house a first substrate, wherein the processing chamber is configured to house a first group of substrates and a second group of substrates, wherein the first group of substrate comprise a first substrate;   a first group of source units including a first source unit, wherein the first group of source units are positioned in a first closed loop, wherein the first group of substrates are positioned in a second closed loop, wherein the magnetic field is configured to produce a plasma gas in the processing chamber to enable deposition materials from the first group of source units to be deposited on the first group of substrates; and   a second group of source units positioned in a third closed loop, wherein the second group of substrates are positioned in a fourth closed loop, wherein the magnetic field is configured to produce a plasma gas in the processing chamber to enable deposition materials from the second group of source units to be deposited on the second group of substrates.   
     
     
         15 . The plasma-enhanced substrate processing system of  claim 14 , wherein the first closed loop, the second closed loop, the third closed loop, and the fourth closed loop are nested one in another. 
     
     
         16 . The plasma-enhanced substrate processing system of  claim 14 , wherein the magnetic-field generation unit comprises an electrical coil configured to carry an electrical current therein and to produce substantially uniform magnetic field in the spatial region. 
     
     
         17 . The plasma-enhanced substrate processing system of  claim 16 , wherein the electrical coil is outside and encircles the processing chamber, and wherein the spatial region is at least partially inside the electrical coil. 
     
     
         18 . The plasma-enhanced substrate processing system of  claim 16 , wherein the electrical coil is inside the processing chamber, and wherein the spatial region is at least partially outside the electrical coil. 
     
     
         19 . The plasma-enhanced substrate processing system of  claim 14 , wherein the first source unit comprises a first target comprising the deposition material and a sputtering surface, wherein the magnetic field is configured to produce the plasma gas between the sputtering surface and the first substrate to allow the deposition material to be sputtered off the first target to be deposited on the first substrate via physical vapor deposition (PVD). 
     
     
         20 . The plasma-enhanced substrate processing system of  claim 14 , wherein the first source unit comprises a gas distribution device configured to provide the deposition material in a chemical vapor, wherein the magnetic field is configured to produce the plasma gas between the gas distribution device and the first substrate to allow the deposition material to be deposited on the first substrate in a plasma enhanced chemical vapor deposition (PECVD). 
     
     
         21 . The plasma-enhanced substrate processing system of  claim 14 , wherein the first closed loop is inside the second closed loop. 
     
     
         22 . The plasma-enhanced substrate processing system of  claim 14 , wherein the second closed loop is inside the first closed loop.