Transistor and process of producing the same, light-emitting device, and display

Abstract

A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.

1 . A transistor comprising:
 an emitter electrode,   a collector electrode,   a semiconductor layer and a sheet base electrode between the emitter electrode and the collector electrode, and   a dark current suppressor layer at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.   
     
     
         2 . The transistor according to  claim 1 , wherein the dark current suppressor layer is situated between the collector electrode and the base electrode. 
     
     
         3 . The transistor according to  claim 1 , wherein the dark current suppressor layer and the base electrode are adjacent to each other. 
     
     
         4 . The transistor according to  claim 1 , wherein the dark current suppressor layer is a layer of an organic or inorganic insulating material. 
     
     
         5 . The transistor according to  claim 1 , wherein the dark current suppressor layer is a layer of an organic or inorganic semiconductor material. 
     
     
         6 . The transistor according to  claim 1 , wherein the dark current suppressor layer includes silicon oxide or aluminum oxide film. 
     
     
         7 . The transistor according to  claim 1 , wherein the dark current suppressor layer is formed by the chemical reaction of the base electrode. 
     
     
         8 . The transistor according to  claim 1 , wherein the dark current suppressor layer has a thickness of 20 nm or less. 
     
     
         9 . The transistor according to  claim 1 , wherein the semiconductor layer situated between the emitter electrode and the base electrode, or between the collector electrode and the base electrode, is an organic compound layer.