Mixed Composition Interface Layer and Method of Forming

Abstract

An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

1 - 10 . (canceled) 
     
     
         11 . A capacitor comprising:
 a first, conductive layer comprising a first chemical element;   a second, insulative dielectric layer comprising a second chemical element different from the first chemical element;   a third, conductive layer; and   an interface layer between and in contact with the first, conductive layer and the second, insulative layer, the interface layer comprising the first and second chemical elements, not substantially comprising material originating from the first, conductive layer or the second, insulative layer, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the first chemical element to the second chemical element in the interface layer proximate the first, conductive layer is greater than a second ratio of the first chemical element to the second chemical element in the interface layer proximate the second, insulative layer.   
     
     
         12 . The capacitor of  claim 11  wherein the second, insulative layer does not substantially comprise the first chemical element. 
     
     
         13 . The capacitor of  claim 11  further comprising a semiconductor substrate, the first, conductive layer being over the substrate. 
     
     
         14 . The capacitor of  claim 11  wherein the interface layer reduces defects between the first, conductive layer and the second, insulative layer compared to defects that would otherwise occur with the second, insulative layer formed on and in contact with the first, conductive layer in the absence of the interface layer. 
     
     
         15 . The capacitor of  claim 11  wherein the interface layer improves adhesion between the first, conductive layer and the second, insulative layer compared to adhesion that would otherwise occur with the second, insulative layer formed on and in contact with the first, conductive layer in the absence of the interface layer. 
     
     
         16 . The capacitor of  claim 11  wherein the first, conductive layer does not substantially comprise the second chemical element. 
     
     
         17 . The capacitor of  claim 16  wherein the second, insulative layer does not substantially comprise the first chemical element. 
     
     
         18 - 33 . (canceled)