Evaporating method for forming thin film

Abstract

A method of forming a film on a substrate includes depositing first and second evaporating source materials respective from first and second evaporating sources onto the substrate while moving the evaporating sources together with respect to the substrate, the first and second evaporating source materials being different from each other and positioned to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first and second evaporating source materials and a non-overlapping deposition region of the second source material such that when the evaporating sources are moved, a film is formed to include a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

1 . A method of forming a multilayer film on a substrate, the method comprising:
 depositing a first evaporating source material from a first evaporating source and a second evaporating source material from a second evaporating source onto the substrate while moving the first evaporating source and the second evaporating source together with respect to the substrate,   wherein the first evaporating source material and the second evaporating source material are different from each other; and   wherein the first evaporating source and the second evaporating source are positioned with respect to each other to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first evaporating source material and the second evaporating source material and a non-overlapping deposition region of the second source material such that when the first evaporating source and the second evaporating source are moved together with respect to the substrate, a multilayer film is formed comprising a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.   
     
     
         2 . A method of forming a multilayer film on a substrate, the method comprising:
 depositing a first evaporating source material from a first evaporating source, a second evaporating source material from a second evaporating source and a third evaporating source material from a third evaporating source onto the substrate while moving the first evaporating source, the second evaporating source and the third evaporating source together with respect to the substrate,   wherein the first evaporating source material, the second evaporating source material and the third evaporating source are different from each other, and   wherein the first evaporating source, the second evaporating source and the third evaporating source are positioned with respect to each other to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first evaporating source material and the second evaporating source material, a non-overlapping deposition region of the second evaporating source material, an overlapping deposition region of the second evaporating source material and the third evaporating source material and a non-overlapping region of the third source material such that when the first evaporating source, the second evaporating source and the third evaporating source are moved together with respect to the substrate, a multilayer film is formed comprising a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material, a third layer that is a deposition of only the second evaporating source material, a fourth layer that is a deposition of a mixture of the second evaporating source material and the third evaporating source material and a fifth layer that is a deposition of only the third evaporating source material.   
     
     
         3 . A method of forming a multilayer film on a substrate, the method comprising:
 depositing a first evaporating source material from a first evaporating source, a second evaporating source material from a second evaporating source and a third evaporating source material from a third evaporating source onto the substrate while moving the first evaporating source, the second evaporating source and the third evaporating source together with respect to the substrate,   wherein the first evaporating source material, the second evaporating source material and the third evaporating source are different from each other; and   wherein the first evaporating source, the second evaporating source and the third evaporating source are positioned with respect to each other to provide an overlapping deposition region of the first evaporating source material and the second evaporating source material and an overlapping deposition region of the second evaporating source material and the third evaporating source material such that when the first evaporating source, the second evaporating source and the third evaporating source are moved together with respect to the substrate, a multilayer film is formed comprising a first layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a second layer that is a deposition of a mixture of the third evaporating source material and the second evaporating source material.   
     
     
         4 . A method of forming a multilayer thin film, the method comprising:
 preparing a first evaporating source evaporating a first evaporating source material onto a first deposition region, and a second evaporating source evaporating a second evaporating source material onto a second deposition region, wherein the first evaporating source material and the second evaporating source material are different from each other;   adjusting the first evaporating source and the second evaporating source in order to obtain a first overlapping region in which the first deposition region and the second deposition region overlap each other;   driving the first evaporating source and the second evaporating source;   depositing the first evaporating source material and the second evaporating source material onto a portion of an object to be processed; and   moving the first evaporating source and the second evaporating source from a first end of the object to a second end of the object to form a multilayer thin film comprising a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.   
     
     
         5 . The method of  claim 4 , wherein the size of the first overlapping region is controlled by adjusting a first angle limiting component between the first evaporating source and the second evaporating source. 
     
     
         6 . The method of  claim 4 , wherein the size of the first deposition region and the size of the second deposition region are controlled by adjusting a second angle limiting components at a periphery of the first evaporating source and the second evaporating source. 
     
     
         7 . The method of  claim 4 , further comprising moving the first evaporating source and the second evaporating source from a second end of the object to a first end of the object to form a fourth layer that is a deposition of only the second evaporating source material, a fifth layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a sixth layer that is a deposition of only the first source material. 
     
     
         8 . The method of  claim 4 , wherein the first and second evaporating sources move at the same speed. 
     
     
         9 . The method of  claim 4 , further comprising:
 preparing a third evaporating source evaporating a third evaporating source material that differs from the first and second evaporating source materials onto a third deposition region;   adjusting the third evaporating source in order to obtain a second overlapping region in which the third deposition region overlaps with the second deposition region;   driving the third evaporating source;   depositing the third evaporating source material onto a portion of an object to be processed; and   moving the third evaporating source from the first end of the object to the second end of the object with the first evaporating source and the second evaporating source such that the multilayer thin film further comprises a fourth layer that is a deposition of a mixture of the second evaporating source material and the third evaporating source material and a fifth layer that is a deposition of only the third evaporating source material.   
     
     
         10 . The method of  claim 9 , further comprising moving the first evaporating source, the second evaporating source and the third evaporating source from a second end of the object to a first end of the object to form a sixth layer that is a deposition of only the third evaporating source material, a seventh layer that is a deposition of a mixture of the third evaporating source material and the second evaporating source material, an eighth layer that is a deposition of only the second source material, a ninth layer that is a deposition of a mixture of the second evaporating source material and the first evaporating source material, an tenth layer that is a deposition of only the first source material. 
     
     
         11 . A method of forming a multilayer thin film, comprising:
 preparing a first evaporating source evaporating a first evaporating source material onto a first deposition region, a second evaporating source evaporating a second evaporating source material onto a second deposition region, and a third evaporating source that evaporates a third evaporating source material onto a third deposition region wherein the first evaporating source material, the second evaporating source material and the third evaporating source material are different from each other;   adjusting the first evaporating source, the second evaporating source and the third evaporating source in order to obtain a first overlapping region in which the second deposition region completely overlaps the first deposition region and a second overlapping region in which the second deposition region completely overlaps the third deposition region;   driving the first evaporating source, the second evaporating source and the third evaporating source;   depositing the first evaporating source material, the second evaporating source material and the third evaporating source material onto a portion of an object to be processed; and   moving the first evaporating source, the second evaporating source and the third evaporating source from a first end of the object to a second end of the object to form a multilayer thin film comprising a first layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a second layer that is a deposition of a mixture of the second evaporating source material and the third evaporating source material.   
     
     
         12 . The method of  claim 11 , further comprising moving the first evaporating source and the second evaporating source from a second end of the object to a first end of the object to form a third layer that is a deposition of a mixture of the third evaporating source material and the second evaporating source material and a fourth layer that is a deposition of a mixture of the second evaporating source material and the first evaporating source material. 
     
     
         13 . The method of  claim 9 , wherein the first through third evaporating sources move at the same speed. 
     
     
         14 . The method of  claim 4 , wherein multilayer thin film is a light emitting layer, and the first evaporating source material is a host material and the second evaporating source material is a dopant. 
     
     
         15 . The method of  claim 9 , wherein multilayer thin film is a light emitting layer, and the first evaporating source material is a first host material, the second evaporating source material is a dopant and the third evaporating source material is a second host material. 
     
     
         16 . The method of  claim 11 , wherein multilayer thin film is a light emitting layer, and the first evaporating source material is a first host material, the second evaporating source material is a dopant and the third evaporating source material is a second host material.