Semiconductor device and method for manufacturing the same, and electric device

Abstract

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

1 . A semiconductor device:
 a first cover material;   a second cover material; and   a transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor layer, the transistor being interposed between the first cover material and the second cover material,   wherein the first cover material and the second cover material have flexibility, and   wherein the semiconductor layer which includes a metal oxide containing indium.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein at least one of the first cover material and the second cover material is formed of a laminate film, an organic film, an inorganic film, or a resin film, or a stacked film.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         4 . The semiconductor device according to  claim 1 , further comprising an antenna electrically connected to the transistor. 
     
     
         5 . An RFID comprising the semiconductor device according to  claim 1 . 
     
     
         6 . A semiconductor device:
 a first cover material;   a second cover material; and   a transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor layer, the transistor being interposed between the first cover material and the second cover material,   wherein the first cover material and the second cover material have flexibility, and wherein the semiconductor layer which includes a metal oxide containing In—Ga—Zn—O.   
     
     
         7 . The semiconductor device according to  claim 6 ,
 wherein at least one of the first cover material and the second cover material is formed of a laminate film, an organic film, an inorganic film, a resin film, or a stacked film.   
     
     
         8 . The semiconductor device according to  claim 6 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         9 . The semiconductor device according to  claim 6 , further comprising an antenna electrically connected to the transistor. 
     
     
         10 . An RFID comprising the semiconductor device according to  claim 6 . 
     
     
         11 . A semiconductor device:
 a first cover material;   an adhesive over the first cover material;   a second cover material over the adhesive;   a transistor interposed between the first cover material and the second cover material, the transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer; and   a conductive layer electrically connected to the transistor,   wherein the semiconductor layer includes a metal oxide containing indium.   
     
     
         12 . The semiconductor device according to  claim 11 ,
 wherein at least one of the first cover material and the second cover material is formed of a laminate film, an organic film, an inorganic film, a resin film, or a stacked film.   
     
     
         13 . The semiconductor device according to  claim 11 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         14 . The semiconductor device according to  claim 11 ,
 wherein the conductive layer serves as an antenna.   
     
     
         15 . An RFID comprising the semiconductor device according to  claim 11 . 
     
     
         16 . A semiconductor device:
 a first cover material;   an adhesive over the first cover material;   a second cover material over the adhesive;   a transistor interposed between the first cover material and the second cover material, the transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer; and   a conductive layer electrically connected to the transistor,   wherein the semiconductor layer includes a metal oxide containing In—Ga—Zn—O.   
     
     
         17 . The semiconductor device according to  claim 16 ,
 wherein at least one of the first cover material and the second cover material is formed of a laminate film, an organic film, an inorganic film, a resin film, or a stacked film.   
     
     
         18 . The semiconductor device according to  claim 16 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         19 . The semiconductor device according to  claim 16 ,
 wherein the conductive layer serves as an antenna.   
     
     
         20 . An RFID comprising the semiconductor device according to  claim 16 . 
     
     
         21 . A semiconductor device:
 a first flexible film;   an adhesive over the first flexible film;   a transistor over the adhesive;   an insulating layer over the transistor;   a conductive layer over the insulating layer, the conductive layer being electrically connected to the transistor; and   a second flexible film over the conductive layer,   wherein the transistor comprises a gate electrode, a gate insulating film, and a semiconductor layer which includes a metal oxide containing indium.   
     
     
         22 . The semiconductor device according to  claim 21 ,
 wherein at least one of the first flexible film and the second flexible film is formed of a laminate film, an organic film, an inorganic film, a resin film, or a stacked film.   
     
     
         23 . The semiconductor device according to  claim 21 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         24 . The semiconductor device according to  claim 21 ,
 wherein the conductive layer serves as an antenna.   
     
     
         25 . An RFID comprising the semiconductor device according to  claim 21 . 
     
     
         26 . A semiconductor device:
 a first flexible film;   an adhesive over the first flexible film;   a transistor over the adhesive;   an insulating layer over the transistor;   a conductive layer over the insulating layer, the conductive layer being electrically connected to the transistor; and   a second flexible film over the conductive layer,   wherein the transistor comprises a gate electrode, a gate insulating film, and a semiconductor layer which includes a metal oxide containing In—Ga—Zn—O.   
     
     
         27 . The semiconductor device according to  claim 26 ,
 wherein at least one of the first flexible film and the second flexible film is formed of a laminate film, an organic film, an inorganic film, a resin film, or a stacked film.   
     
     
         28 . The semiconductor device according to  claim 26 ,
 wherein the transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.   
     
     
         29 . The semiconductor device according to  claim 26 ,
 wherein the conductive layer serves as an antenna.   
     
     
         30 . The semiconductor device according to  claim 26 ,
 wherein each of the first flexible film and the second flexible film includes a resin selected from the group consisting of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, polyimide, an acrylic based synthetic resin, and an epoxy based synthetic resin.   
     
     
         31 . An RFID comprising the semiconductor device according to  claim 26 .