Semiconductor Device and Manufacturing Method Thereof

Abstract

A method of manufacturing a semiconductor device, includes forming an insulating film of a material having a low relative dielectric constant on a substrate, forming an SiOCH film on the insulating film in a chamber, forming an SiO 2 film continuously on the SiOCH film by reducing a carbon concentration therein in the chamber in which plasma is being generated, performing a plasma etching on the insulating film by using the SiOCH film and the SiO 2 film as a hardmask layer, to form a trench in the insulating film, and performing wet etching on a surface of the trench formed in the insulating film, to remove a layer damaged by the plasma etching and process residues.

1 - 16 . (canceled) 
     
     
         17 . A semiconductor device comprising:
 an insulating film of a material having a low relative dielectric constant;   an SiOCH film formed on the insulating film, having a carbon concentration higher than a carbon concentration of the insulating film;   a trench formed in the SiOCH film and the insulating film;   a first barrier layer formed on an inside surface of the trench;   a conductive layer filling the trench; and   a second barrier layer formed on the SiOCH film and the conductive layer.   
     
     
         18 . The device according to  claim 17 , wherein a relative dielectric constant of the insulating film is less than or equal to 3.0. 
     
     
         19 . The device according to  claim 17 , wherein the insulating film is formed of SiOCH. 
     
     
         20 . A semiconductor device comprising:
 an SiOCH film formed on an insulating film;   a dense layer formed on the SiOCH film, having a density higher than a density of the SiOCH film and a carbon concentration higher than a carbon concentration of the SiOCH film;   a trench formed in the dense layer and the SiOCH film;   a first barrier layer formed on an inside surface of the trench;   a conductive layer filling the trench; and   a second barrier layer formed on the dense layer and the conductive layer.