US2012134028A1PendingUtilityA1

Wafer level lens, production method of wafer level lens, and imaging unit

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Assignee: MARUYAMA YOICHIPriority: Aug 13, 2009Filed: Aug 12, 2010Published: May 31, 2012
Est. expiryAug 13, 2029(~3.1 yrs left)· nominal 20-yr term from priority
Inventors:Yoichi Maruyama
B29D 11/00009G02B 1/11B29D 11/00307G02B 13/0085G02B 13/001G02B 7/022G02B 3/0031H10F 39/12H10F 39/8063G02B 13/18B29D 11/00B29D 11/00096H04N 23/55
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Claims

Abstract

A sufficient light-shielding property is obtained by a wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on the substrate in which the wafer level lens has a black resist layer formed on the surface of the lens module or on the surface of the substrate and the black resist layer is formed with a pattern having an opening at a part intersecting the optical axis of the lens, and generation of defects such as ghosts, flares and the like due to a reflected light can be prevented and an increase in the production cost can be suppressed.

Claims

exact text as granted — not AI-modified
1 . A wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on said substrate,
 wherein the wafer level lens has a black resist layer formed on the surface of said lens module or on the surface of said substrate, and said black resist layer is formed with a pattern having an opening at a part intersecting the optical axis of said lens.   
     
     
         2 . A wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on said substrate,
 wherein the wafer level lens has a light shielding layer formed on an at least partial region of the light incidence side outermost surface of said lens module and   a low reflective light shielding layer formed with a pattern having an opening at a part intersecting the optical axis of said lens, on the surface of said lens module or on the surface of said substrate other than said light incidence side outermost surface,   and said light shielding layer has lower transmittance for a visible light and higher reflection rate than said low reflective light shielding layer.   
     
     
         3 . The wafer level lens according to  claim 2 , wherein said low reflective light shielding layer is a black resist layer. 
     
     
         4 . The wafer level lens according to  claim 1 , wherein said black resist layer is formed using a black resist composition. 
     
     
         5 . The wafer level lens according to  claim 1 , wherein said black resist layer contains any one of carbon black, silver-tin and titanium black. 
     
     
         6 . The wafer level lens according to  claim 1 , wherein said black resist layer has a reflection rate of 2% or less and a transmittance of 1% or less for visible light having a wavelength of 400 to 700 nm. 
     
     
         7 . The wafer level lens according to  claim 2 , wherein said light shielding layer contains a metal material. 
     
     
         8 . The wafer level lens according to  claim 2 , wherein said light shielding layer contains chromium. 
     
     
         9 . The wafer level lens according to  claim 2 , wherein said light shielding layer has a reflection rate of 4% or less and a transmittance of 0.1% or less for visible light having a wavelength of 400 to 700 nm. 
     
     
         10 . The wafer level lens according to  claim 1 , wherein a plurality of said lens modules are laminated via a spacer formed on said substrate. 
     
     
         11 . An imaging unit having
 lens modules obtained by separating said substrate of said lens module according to  claim 1  so that each module contains said lens,   an imaging device, and   a sensor substrate on which said imaging device is disposed.   
     
     
         12 . A method of producing a wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on said substrate,
 wherein before formation of said lenses on said substrate, a black resist layer is coated on the surface of the substrate,   said coated black resist layer is formed with a pattern having an opening at a part intersecting the optical axis of said lens, then,   said lens is integrally molded on said substrate.   
     
     
         13 . A method of producing a wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on said substrate,
 wherein said lens is molded on said substrate,   a black resist layer is coated on the lens surface of said lens and on the surface of said substrate, and   said black resist layer is formed with a pattern having an opening at a part intersecting the optical axis of said lens.   
     
     
         14 . The production method of a wafer level lens according to  claim 13 , wherein said black resist layer is coated by a spray coating method. 
     
     
         15 . The production method of a wafer level lens according to  claim 12 , wherein said black resist layer is patterned by photolithography. 
     
     
         16 . The production method of a wafer level lens according to  claim 12 , wherein said lens is molded on said substrate with a mold. 
     
     
         17 . The production method of a wafer level lens according to  claim 12 , wherein said black resist layer is formed using a black resist composition. 
     
     
         18 . The production method of a wafer level lens according to  claim 12 , wherein said black resist layer contains any one of carbon black, silver-tin and titanium black. 
     
     
         19 . The production method of a wafer level lens according to  claim 12 , wherein said black resist layer has a reflection rate of 2% or less and a transmittance of 1% or less for visible light having a wavelength of 400 to 700 nm. 
     
     
         20 . The production method of a wafer level lens according to  claim 12 , wherein a plurality of said lens modules are laminated via a spacer formed on said substrate.

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