Edge-Contacted Vertical Carbon Nanotube Transistor

Abstract

A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.

1 . A device comprising:
 a first electrode;   a second electrode;   a first gate electrode, between the first and second electrodes and separated from the first electrode by a first insulator and separated from the second electrode layer by a second insulator; and   a nanotube, coupled to and extending from the first and second electrodes, wherein the nanotube is separated from the first gate electrode by a first gate insulator.   
     
     
         2 . The device of  claim 1  comprising:
 a second gate insulator covering the nanotube and extending from the first to the second electrodes; and 
 a second gate electrode covering the second gate insulator and nanotube, and extending from the first to the second electrodes. 
 
     
     
         3 . The device of  claim 1  wherein the first gate electrode and second electrodes are above the first electrode, and the nanotube is oriented approximately perpendicular to a substrate on which the device is formed. 
     
     
         4 . The device of  claim 1  wherein the first, second, and first gate electrodes are along a sidewall of a trench. 
     
     
         5 . The device of  claim 1  wherein the nanotube is a single-walled carbon nanotube. 
     
     
         6 . An electronic system comprising a device of  claim 1 .