Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure bake on the resist film 11 after performing the immersion exposure; developing the resist film 11 after performing the post exposure bake; and after the post exposure bake is performed on the resist film 11, removing an edge 15 of the resist film 11, the edge not being exposed.

1 .- 6 . (canceled) 
     
     
         7 . A method for manufacturing a semiconductor device comprising:
 forming a resist film on a film to be processed;   baking the resist film;   performing immersion exposure on the resist film after the baking;   performing post exposure bake on the resist film after performing the immersion exposure;   performing wafer edge exposure on an edge of the resist film after performing the post exposure bake;   heating the edge of the resist film simultaneously or after performing the wafer edge exposure on the edge of the resist film; and   developing the resist film after the edge of the resist film is heated.   
     
     
         8 . The method for manufacturing a semiconductor device according to  claim 7 , wherein the edge of the resist film is heated to a temperature higher than ambient temperature. 
     
     
         9 . The method for manufacturing a semiconductor device according to  claim 7 , wherein the edge of the resist film is heated by infrared ray irradiation. 
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 7 , wherein a region of the resist film except for the edge of the resist film is cooled at the time when the edge of the resist film is heated. 
     
     
         11 . (canceled) 
     
     
         12 . A method for manufacturing a semiconductor device comprising:
 forming a resist film on a film to be processed;   baking the resist film;   performing immersion exposure on the resist film after the baking;   performing wafer edge exposure on an edge of the resist film after performing the immersion exposure;   performing post exposure bake on the resist film after performing the wafer edge exposure;   developing the resist film after performing the post exposure bake; and   cooling the resist film after performing the immersion exposure on the resist film and before performing the post exposure bake on the resist film.   
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 12 , wherein the resist film is cooled before performing the wafer edge exposure on the edge of the resist film. 
     
     
         14 . The method for manufacturing a semiconductor device according to  claim 12 , wherein the resist film is cooled to a temperature lower than ambient temperature.