Valve and production method thereof

Abstract

A method of producing a valve includes the steps of forming a channel in a silicon substrate, with the channel having an opening penetrating an entire thickness of the silicon substrate, and forming, by patterning, a metal layer on one surface of the silicon substrate without closing the opening of the channel. In addition, a low melting point metal member is deposited so as to cover at least a part of the metal layer and also to block the opening of the channel.

1 .- 12 . (canceled) 
     
     
         13 . A method of producing a valve, comprising the steps of:
 forming a channel in a silicon substrate, the channel having an opening penetrating an entire thickness of the silicon substrate;   forming, by patterning, a metal layer on one surface of the silicon substrate without closing the opening of the channel; and   depositing a low melting point metal member so as to cover at least a part of the metal layer and also to block the opening of the channel.   
     
     
         14 . The production method according to  claim 13 , wherein the deposition of the low melting point metal member comprises depositing the low melting point metal member by dipping the silicon substrate in a two-phase liquid bath in which one of the phases comprises a metal material constituting the low melting point metal member. 
     
     
         15 . The production method according to  claim 13 , wherein the formation of the metal layer comprises forming the metal layer by a sputtering process. 
     
     
         16 . The production method according to  claim 15 , wherein the patterning of the metal layer is performed by photolithography and metal etching. 
     
     
         17 . The production method according to  claim 13 , wherein the deposition of the low melting point metal member comprises allowing a part of the low melting point metal member to intrude into the channel by:
 raising a temperature of the low melting point metal member above a melting temperature of the metal material constituting the low melting point metal member; and   applying a pressure difference between both ends of the channel.   
     
     
         18 . The production method according to  claim 13 , further comprising, before forming, by patterning, the metal layer on the one surface of the silicon substrate without closing the opening of the channel, the step of forming a groove on the one surface of the silicon substrate,
 wherein in the deposition of the low melting point metal member, the low melting point metal member is deposited to a region including the groove formed on the silicon substrate.   
     
     
         19 . The production method according to  claim 13 , further comprising, in forming, by patterning, the metal layer on the one surface of the silicon substrate without closing the opening of the channel, the step of simultaneously patterning the metal layer to form a pattern for forming a heater. 
     
     
         20 . The production method according to  claim 13 , further comprising forming an adhesive layer between the silicon substrate and the metal layer.