Semiconductor device

Abstract

A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.

1 . A semiconductor device comprising:
 a silicon substrate;   a silicon oxide film formed on the silicon substrate;   a radio frequency interconnect provided on the silicon oxide film and passing a radio frequency signal;   a prescribed potential interconnect provided on the silicon oxide film and placed at a prescribed potential; and   a trench formed in a region of the silicon oxide film located between the radio frequency interconnect and the prescribed potential interconnect as viewed perpendicular to a surface of the silicon substrate, the trench reaching the silicon substrate.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 a silicon layer is formed on the silicon oxide film, and   the radio frequency interconnect and the prescribed potential interconnect are formed on the silicon oxide layer.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein bonding pads including an antenna pad, a transmit pad, a receive pad and GND pads are provided on the silicon layer. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein transistors are provided on the silicon layer. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein interconnect regions connecting the bonding pad to a region including the transistors are provided. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein the trench is formed between the radio frequency interconnects. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein the trench has a bottom located at 1 μm or more below the interface between the silicon substrate and the silicon oxide film. 
     
     
         8 . The semiconductor device according to  claim 2 , wherein a peripheral length of the bottom of the trenches is 20 μm or more. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the radio frequency signal has a frequency of 500 MHz or more and a power of 20 dBm or more. 
     
     
         10 . A semiconductor device comprising:
 a silicon substrate;   a silicon oxide film formed on the silicon substrate;   a plurality of transistors provided on the silicon oxide film; and   a trench formed in a region of the silicon oxide film located between the transistors as viewed perpendicular to a surface of the silicon substrate, the trench reaching the silicon substrate.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein the trench has a bottom located at 1 μm or more below the interface between the silicon substrate and the silicon oxide film. 
     
     
         12 . The semiconductor device according to  claim 10 , wherein a peripheral length of the bottom of the trenches is 20 μm or more. 
     
     
         13 . The semiconductor device according to  claim 10 , wherein the semiconductor device receives a radio frequency signal that has a frequency of 500 MHz or more and a power of 20 dBm or more.