Electrode in semiconductor device, capacitor and method of fabricating the same

Abstract

A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.

1 . An electrode for a semiconductor device, comprising:
 a nickel layer with impurities.   
     
     
         2 . The electrode of  claim 1 , wherein the impurities include carbon (C) or hydrogen (H). 
     
     
         3 . The electrode of  claim 1 , wherein a concentration of the impurities in the nickel layer with impurities ranges from approximately 5% to approximately 50%. 
     
     
         4 . The electrode of  claim 1 , wherein the electrode is a gate electrode. 
     
     
         5 . An electrode for a semiconductor device, comprising:
 a combination of a pure nickel layer and a nickel layer with impurities.   
     
     
         6 . The electrode of  claim 5 , wherein the pure nickel layer and the nickel layer with impurities are formed to have a stack structure. 
     
     
         7 . The electrode of  claim 5 , wherein the combination of the pure nickel layer and the nickel layer with impurities has a stack structure of a first nickel layer with impurities, a pure nickel layer, and a second nickel layer with impurities. 
     
     
         8 . The electrode of  claim 5 , wherein the impurities include carbon (C) or hydrogen (H). 
     
     
         9 . The electrode of  claim 5 , wherein a concentration of the impurities in the nickel layer with impurities ranges from approximately 5% to approximately 50% of the nickel layer. 
     
     
         10 . The electrode of  claim 5 , wherein the electrode is a gate electrode. 
     
     
         11 . A capacitor, comprising:
 a first electrode;   a dielectric layer; and   a second electrode,   wherein one of the first electrode and the second electrode includes a nickel layer with impurities.   
     
     
         12 . The capacitor of  claim 11 , wherein one of the first electrode and the second electrode includes a pure nickel layer and a nickel layer with impurities. 
     
     
         13 . The capacitor of  claim 12 , wherein the nickel layer with impurities is formed to be in contact with the dielectric layer. 
     
     
         14 . The capacitor of  claim 12 , wherein one of the first electrode and the second electrode has a stack structure of a first nickel layer with impurities, a pure nickel layer, and a second nickel layer with impurities. 
     
     
         15 . The capacitor of  claim 11 , wherein the impurities include carbon (C) or hydrogen (H). 
     
     
         16 . The capacitor of  claim 11 , wherein a concentration of the impurities in the nickel layer with impurities ranges from approximately 5% to approximately 50% of the nickel layer with impurities. 
     
     
         17 . The capacitor of  claim 11 , wherein the first electrode or the second electrode is a plate type, a concave type, a cylinder type, or a pillar type.