Low-cost large-screen wide-angle fast-response liquid crystal display apparatus

Abstract

A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture: forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode, forming a separate thin film semiconductor layer component, and a contact hole, forming a source electrode, a drain electrode, a common electrode at the center of a pixel and a comb common electrode, such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.

1 . A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture:
 (1) forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode (wherein said photolithographic procedure uses a halftone exposure method for the first time);   (2) forming a separate thin film semiconductor layer component, and a contact hole (wherein said photolithographic procedure uses a halftone exposure method for the second time);   (3) forming a source electrode (or video signal line), a drain electrode, a common electrode at the center of a pixel and a comb common electrode (wherein said third time of photolithographic procedure uses a halftone exposure method), such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method (wherein said film is formed at a terminal portion other than those of a gate electrode, a source electrode and a common electrode).