Chemical mechanical planarization (cmp) pad conditioner and method of making

Abstract

A method of forming a chemical mechanical planarization (CMP) pad conditioner includes placing abrasive grains on a major surface of a substrate, forming a binding composition at an exterior surface of the abrasive grains, and depositing a bonding layer over the surface of the substrate and a portion of the abrasive grains to secure the abrasive grains to the major surface of the substrate.

1 . A chemical mechanical planarization (CMP) pad conditioner comprising:
 a substrate; and   abrasive grains contained within a bonding layer overlying the substrate, wherein the abrasive grains comprise an average grit size of less than about 90 microns; and   wherein the CMP pad conditioner comprises an upper surface having an average surface roughness (Ra) of not greater than about 15 microns.   
     
     
         2 . The CMP pad conditioner of  claim 1 , wherein the average surface roughness (Ra) is within a range between about 0.1 microns and about 15 microns. 
     
     
         3 . The CMP pad conditioner of  claim 1 , wherein the average surface roughness (Rz) within a range between about 1 micron and about 100 microns. 
     
     
         4 . The CMP pad conditioner of  claim 1 , wherein the upper surface of the CMP pad conditioner comprises an average surface roughness (Rrms) of not greater than about 20 microns. 
     
     
         5 . The CMP pad conditioner of  claim 1 , wherein the substrate comprises chromium in an amount within a range between about 2% and about 30%. 
     
     
         6 . The CMP pad conditioner of  claim 1 , wherein the abrasive grains have an average grit size within a range between about 1 micron and about 90 microns. 
     
     
         7 . The CMP pad conditioner of  claim 1 , wherein the bonding layer comprises a series of films overlying each other. 
     
     
         8 . A chemical mechanical planarization (CMP) pad conditioner comprising:
 a substrate; and   abrasive grains contained within a bonding layer overlying the substrate, wherein a binding composition comprising a carbide is present at a surface of the abrasive grains; and   wherein the CMP pad conditioner comprises an upper surface having an average surface roughness (Ra) of not greater than about 15 microns.   
     
     
         9 . The CMP pad conditioner of  claim 8 , wherein the average surface roughness (Rz) within a range between about 1 micron and about 100 microns. 
     
     
         10 . The CMP pad conditioner of  claim 8 , wherein the upper surface of the CMP pad conditioner comprises an average surface roughness (Rrms) of not greater than about 20 microns. 
     
     
         11 . The CMP pad conditioner of  claim 8 , wherein the substrate comprises chromium in an amount within a range between about 2% and about 30%. 
     
     
         12 . The CMP pad conditioner of  claim 8 , wherein the abrasive grains have an average grit size within a range between about 1 micron and about 90 microns. 
     
     
         13 . The CMP pad conditioner of  claim 8 , wherein the bonding layer comprises a series of films overlying each other. 
     
     
         14 . A method of forming a chemical mechanical planarization (CMP) pad conditioner comprising:
 placing abrasive grains on a major surface of a substrate;   forming a binding composition at an exterior surface of the abrasive grains; and   depositing a bonding layer over the surface of the substrate and a portion of the abrasive grains to secure the abrasive grains to the major surface of the substrate.   
     
     
         15 . The method of  claim 14 , wherein depositing includes a plating process. 
     
     
         16 . The method of  claim 14 , further comprising cleaning the abrasive grains and surface of the substrate prior to depositing the bonding layer. 
     
     
         17 . The method of  claim 14 , wherein forming includes heating the substrate and abrasive grains. 
     
     
         18 . The method of  claim 14 , wherein the binding composition is formed at an interface of the abrasive grains and the substrate. 
     
     
         19 . The method of  claim 14 , wherein the binding composition comprises chromium carbide. 
     
     
         20 . The method of  claim 14 , further comprising treating the substrate after depositing the bonding layer to form a secondary binding composition at an interface of the abrasive grains and bonding layer.