Thermoelectric conversion device

Abstract

A thermoelectric conversion device includes a Heusler alloy film having a structure of B 2 or L 21 in notation of A 2 BC and a pair of electrodes on the Heusler alloy film to output an electromotive force generated by a thermal gradient in the Heusler alloy film. The thermoelectric conversion device further includes an electrode for applying an electric field or a voltage to the Heusler alloy film to increase and control an electric conductivity and a Seebeck coefficient S of the Heusler metal film. The device can control to increase an electric conductivity and Seebeck coefficient S by applying an electric field or a voltage through an insulation film to the Heusler alloy film. The device may have a shared connection to select one of outputs of a plurality of thermoelectric conversion devices arranged in a matrix or increase an electromotive force as an output.

1 . A thermoelectric conversion device comprising:
 a Heusler alloy film; and   a pair of electrodes on the Heusler alloy film at a predetermined distance therebetween to output an electromotive force generated by a thermal gradient in the Heusler alloy film.   
     
     
         2 . A thermoelectric conversion device comprising:
 a Heusler alloy film;   a pair of electrodes on the Heusler alloy film at a predetermined distance therebetween to output an electromotive force generated by a thermal gradient in the Heusler alloy film;   an insulation film on the Heusler alloy film; and   a gate electrode on the Heusler alloy film configured to apply an electric field or a voltage to the Heusler alloy film through the insulation film.   
     
     
         3 . A thermoelectric conversion device comprising:
 a Heusler alloy film;   a pair of electrodes on the Heusler alloy film at a predetermined distance therebetween to output an electromotive force generated by a thermal gradient in the Heusler alloy film as a voltage;   an insulation film on the Heusler alloy film;   a gate electrode on the Heusler alloy film; and   a line configured to apply the voltage to the Heusler alloy film through the insulation film.   
     
     
         4 . The thermoelectric conversion device as claimed in  claim 1 , further comprising:
 a buffer layer; and   a seed layer on the buffer layer, wherein the Heusler alloy film has a crystal structure of L 21  and is disposed on the buffer layer.   
     
     
         5 . The thermoelectric conversion device as claimed in  claim 2 , further comprising:
 a buffer layer; and   a seed layer on the buffer layer, wherein the Heusler alloy film has a crystal structure of L 21  and is disposed on the buffer layer.   
     
     
         6 . The thermoelectric conversion device as claimed in  claim 3 , further comprising:
 a buffer layer; and   a seed layer on the buffer layer, wherein the Heusler alloy film has a crystal structure of L 21  and is disposed on the buffer layer.   
     
     
         7 . The thermoelectric conversion device as claimed in  claim 4 , wherein the Heusler alloy film comprises Fe 2 TiSn. 
     
     
         8 . The thermoelectric conversion device as claimed in  claim 5 , wherein the Heusler alloy film comprises Fe 2 TiSn. 
     
     
         9 . The thermoelectric conversion device as claimed in  claim 6 , wherein the Heusler alloy film comprises Fe 2 TiSn. 
     
     
         10 . The thermoelectric conversion device as claimed in  claim 2 , wherein
 the Heusler alloy film comprises a plurality of Heusler alloy films, wherein   a pair of the electrodes comprise a plurality of pairs of the electrodes at a predetermined distance therebetween to output electromotive forces generated by thermal gradients in the Heusler alloy films as voltages wherein   the insulation film comprise a plurality of insulation films, and wherein   the gate electrode comprises a plurality of the gate electrodes to apply the voltages to the Heusler alloy films through the insulation films or electric fields to the Heusler alloy films.   
     
     
         11 . The thermoelectric conversion device as claimed in  claim 3 ,
 wherein the line comprises a plurality of lines, wherein the Heusler alloy film comprises a plurality of Heusler alloy films, wherein   a pair of the electrodes comprise a plurality of pairs of the electrodes at a predetermined distance therebetween to output electromotive forces generated by thermal gradients in the Heusler alloy films, wherein   the insulation film comprise a plurality of insulation films, and wherein   the gate electrode comprises a plurality of the gate electrodes to apply voltages or electric fields to the Heusler alloy films through the insulation films, and wherein   a plurality of the lines respectively configured to supply the electromotive forces to the gate electrodes to apply voltages derived by the electromotive forces to the Heusler alloy film through the insulation films.   
     
     
         12 . The thermoelectric conversion device as claimed in  claim 10 , further comprising buffer layers and seed layers on the buffer layers respectively, wherein each of the Heusler metal films has a crystal structure of L 21  and is lamented on the seed layer. 
     
     
         13 . The thermoelectric conversion device as claimed in  claim 11 , further comprising buffer layers and seed layers on the buffer layers respectively, wherein each of the Heusler metal films has a crystal structure of L 21  and is lamented on the seed layer. 
     
     
         14 . The thermoelectric conversion device as claimed in  claim 12 , wherein the Heusler metal films comprise Fe 2 TiSn. 
     
     
         15 . The thermoelectric conversion device as claimed in  claim 13 , wherein the Heusler metal films comprise Fe 2 TiSn.