Embedded structure of circuit board

Abstract

An embedded structure of circuit board is provided. The embedded structure of the present invention includes a dielectric layer, a pad opening disposed in the dielectric layer, and a via disposed in the pad opening and in the dielectric layer, wherein the outer surface of the dielectric layer has a substantially even surface.

1 . An embedded structure, comprising:
 a dielectric layer, wherein the outer surface of said dielectric layer has a substantially even surface with a roughness A;   a pad opening disposed in said dielectric layer, wherein the inner wall of said pad opening has a roughness B; and   a via disposed in said pad opening and in said dielectric layer, wherein said via and said pad opening together define said embedded structure, the inner wall of said via has a roughness C and A, B, C are mutually different.   
     
     
         2 . The embedded structure of  claim 1 , further comprising:
 a trench disposed in said dielectric layer, wherein the inner wall of said trench has said roughness B.   
     
     
         3 . The embedded structure of  claim 1 , wherein C>B>A. 
     
     
         4 . The embedded structure of  claim 1 , further comprising:
 a conductive layer filling said via and said pad opening to form an embedded circuit structure.   
     
     
         5 . The embedded structure of  claim 4 , wherein said dielectric layer acts as a seed layer for said conductive layer. 
     
     
         6 . The embedded structure of  claim 1 , wherein said dielectric layer comprises a metallic complex. 
     
     
         7 . The embedded structure of  claim 6 , wherein said metallic complex comprises a metal selected from a group consisting of Mn, Cr, Pd and Pt. 
     
     
         8 . The embedded structure of  claim 1 , wherein said roughness A is expressed by Ra<0.5 μm. 
     
     
         9 . The embedded structure of  claim 1 , wherein said roughness B is expressed by 0.2 μm<Ra<0.5 μm. 
     
     
         10 . The embedded structure of  claim 1 , wherein said roughness C is expressed by 0.5 μm<Ra<5.0 μm. 
     
     
         11 . The embedded structure of  claim 1 , further comprising:
 an organic film layer covering said dielectric layer and selectively exposing said via and said pad opening.   
     
     
         12 . The embedded structure of  claim 11 , wherein said organic film layer comprises a hydrophilic polymer, wherein said hydrophilic polymer comprises a functional group selected form a group consisting of hydroxyl group (—OH), amide group (—CONH2), sulfonic group (—SO3H) and carboxylic group (—COOH). 
     
     
         13 . The embedded structure of  claim 11 , wherein said organic film layer comprises a hydrophobic polymer, wherein said hydrophobic polymer is selected form a group consisting of methacrylate resin, vinyl phenyl resin, allyl resin, polyacrylate resin, polyether resin, polyolefin resin, polyamide resin, and polysiloxane resin.