Imprint template fabrication and repair based on directed block copolymer assembly

Abstract

Imprinted apparatuses, such as Bit-Patterned Media (BPM) templates, Discrete Track Recording (DTR) templates, semiconductors, and photonic devices are disclosed. Methods of fabricating imprinted apparatuses using a combination of patterning and block copolymer (BCP) self-assembly techniques are also disclosed.

1 . A method comprising:
 forming a first pattern on a first substrate;   transferring the first pattern from the first substrate to a second substrate; and   performing block copolymer self-assembly on the second substrate having the first pattern thereon, forming a second pattern.   
     
     
         2 . The method of  claim 1 , wherein the first pattern is formed on the first substrate by lithography. 
     
     
         3 . The method of  claim 2 , wherein the lithography comprises:
 depositing a mask layer on said first substrate; and   forming said first pattern on said first substrate.   
     
     
         4 . The method of  claim 1 , wherein the first pattern has a density of about 250 Gdpsi or lower. 
     
     
         5 . The method of  claim 1 , wherein the block copolymer self-assembly comprises:
 coating the second substrate with a block copolymer;   removing one block from the block copolymer; and   transferring the pattern from a remaining block of the block copolymer to said second substrate.   
     
     
         6 . The method of  claim 1 , wherein said transferring the pattern and said performing block copolymer self assembly are repeated. 
     
     
         7 . The method of  claim 1 , wherein the block copolymer self-assembly comprises:
 coating the second substrate with a block copolymer,   removing one block from the block copolymer,   depositing a mask on the remaining block of the block copolymer,   transferring the pattern from the remaining block of the block copolymer to the second substrate, and   removing the mask.   
     
     
         8 . The method of  claim 7 , wherein the block copolymer self-assembly increases the density of the second pattern relative to the density of the first pattern. 
     
     
         9 . The method of  claim 7 , wherein the block copolymer self assembly reduces the number of dots missing from the second pattern relative to the number of dots missing from the first pattern. 
     
     
         10 . The method of  claim 7 , wherein the mask removal comprises:
 removing a layer of the mask from an upper surface of the remaining block of the block copolymer,   removing a layer of the mask from a side wall of the remaining block of the block copolymer, and   removing the remaining block of the block copolymer from the second substrate.   
     
     
         11 . The method of  claim 10 , wherein the mask is removed from the upper surface using chlorine gas. 
     
     
         12 . The method of  claim 10 , wherein the mask is removed from the side wall using ion milling. 
     
     
         13 . The method of  claim 10 , wherein the remaining block is removed by an oxygen dry etching process. 
     
     
         14 . The method of  claim 1 , wherein the second pattern has a density of about 1 Tbpsi or greater. 
     
     
         15 . The method of  claim 1 , wherein the block copolymer is selected from the group consisting of polystyrene-block-polymethylmethacrylate, polystyrene-block-poly2-vinylpyridine, polystyrene-block-poly4-vinylpyridine, polystyrene-block-polyethyleneoxide, polystyrene-block-polyisoprene, polystyrene-block-butadiene, polystyrene-block-polydimethylsiloxane, polyisoprene-block-polydimethylsiloxane, polyisobutylene-block-polydimethylsiloxane, polymethylmethacrylate-block-polydimethylsiloxane, and polystyrene-block-polyferrocenylsilane 
     
     
         16 . An apparatus manufactured by a method comprising:
 forming a first pattern on a first substrate;   transferring the first pattern from the first substrate to a second substrate; and   performing block copolymer self-assembly on the second substrate having the first pattern thereon, forming a second pattern.   
     
     
         17 . An apparatus, comprising:
 a patterned substrate having a pattern density of at least about 1 Tdpsi.   
     
     
         18 . The apparatus of  claim 17 , wherein the substrate comprises silicon. 
     
     
         19 . The apparatus of  claim 17 , wherein the substrate comprises quartz. 
     
     
         20 . The apparatus of  claim 17 , wherein the apparatus comprises a media template. 
     
     
         21 . The apparatus of  claim 17 , wherein comprises a semiconductor. 
     
     
         22 . The apparatus of  claim 17 , wherein the apparatus comprises a photonic device.