US2012164517A1PendingUtilityA1

Thin film buried anode devices

59
Assignee: LEE SE-HEEPriority: Nov 13, 2001Filed: Dec 13, 2011Published: Jun 28, 2012
Est. expiryNov 13, 2021(expired)· nominal 20-yr term from priority
Y02P70/50H01M 10/052H01M 10/058H01M 4/1391H01M 10/0436H01M 4/1395H01M 4/0438H01M 4/525H01M 4/382H01M 4/0445H01M 4/505H01M 4/485H01M 10/0562H01M 4/0426H01M 4/0421Y02E60/10Y10T29/49108Y10T29/49115
59
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Claims

Abstract

A reverse configuration, lithium thin film battery ( 300 ) having a buried lithium anode layer ( 305 ) and process for making the same. The present invention is formed from a precursor composite structure ( 200 ) made by depositing electrolyte layer ( 204 ) onto substrate ( 201 ), followed by sequential depositions of cathode layer ( 203 ) and current collector ( 202 ) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer ( 305 ) is formed via electroplating a lithium anode layer at the interface of substrate ( 201 ) and electrolyte film ( 204 ). The electroplating is accomplished by applying a current between anode current collector ( 201 ) and cathode current collector ( 202 ).

Claims

exact text as granted — not AI-modified
1 - 42 . (canceled) 
     
     
         43 . A process for producing a thin film structure, comprising:
 a) depositing a solid state electrolyte material onto an exposed, conductive face of a substrate, wherein the solid state electrolyte material is a conductor of lithium ions;   b) depositing a cathode layer comprising a transition metal oxide upon an exposed face of the solid state electrolyte material;   c) depositing a cathode current collector layer comprising an electron conducting material upon an exposed face of the cathode film layer;   d) forming an anode layer comprising a metal between the conductive face of the substrate and the solid state electrolyte material by flowing a current between the substrate conductive face and the cathode current collector layer, whereby the cathode layer is oxidized and metal ions from the cathode layer are reduced to a solid state metal at the interface of the solid state electrolyte material and the substrate to form the anode layer; and   e) maintaining the current flow until the anode layer contains a desired amount of metal.   
     
     
         44 . The process of  claim 43 , wherein the layers are deposited by vacuum evaporation, reactive sputtering, or chemical vapor deposition. 
     
     
         45 . The process of  claim 43 , wherein the substrate comprises a refractory metal, a ferrous alloy, or a non-electrical conductor onto which a conductive film has been deposited. 
     
     
         46 . The process of  claim 45 , wherein the non-electrical conductor is glass or plastic. 
     
     
         47 . The process of  claim 43 , wherein the solid state electrolyte material comprises sub-stoichiometric lithium phosphorous oxynitride. 
     
     
         48 . The process of  claim 43 , wherein the cathode layer comprises a lithiated transition metal oxide. 
     
     
         49 . The process of  claim 48 , wherein the cathode layer comprises lithium vanadate, lithium manganate, lithium nickelate, or lithium cobaltate. 
     
     
         50 . The process of  claim 43 , wherein the cathode layer comprises vanadium. 
     
     
         51 . The process of  claim 43 , wherein the cathode layer comprises vanadium oxide. 
     
     
         52 . The process of  claim 43 , wherein the cathode current collector comprises an electrically conductive metal. 
     
     
         53 . A thin film structure, comprising:
 a) a substrate layer that has at least one conductive face and is characterized by its ability to support layers deposited onto it;   b) an anode layer comprising a metal in contact with a conductive face of the substrate layer;   c) an electrolyte layer comprising a solid state electrolyte material that is a conductor of lithium ions, one face of which is in contact with the anode layer;   d) a cathode layer comprising a transition metal oxide that is in contact with a face of the electrolyte layer that is not in contact with the anode layer; and   e) a cathode current collector layer comprising an electron conducting material that is in contact with a face of the cathode layer that is not in contact with the electrolyte layer.   
     
     
         54 . The thin film structure of  claim 53 , wherein the substrate layer comprises a refractory metal, a ferrous alloy, or a non-electrical conductor onto which a conductive film has been deposited. 
     
     
         55 . The device of  claim 54 , wherein the non-electrical conductor is glass. 
     
     
         56 . The thin film structure of  claim 53 , wherein the solid state electrolyte material comprises sub-stoichiometric lithium phosphorous oxynitride. 
     
     
         57 . The thin film structure of  claim 53 , wherein the cathode layer comprises a lithiated transition metal oxide. 
     
     
         58 . The device of  claim 57 , wherein the cathode layer comprises lithium vanadate, lithium manganate, lithium nickelate, or lithium cobaltate. 
     
     
         59 . The thin film structure of  claim 53 , wherein the cathode layer comprises vanadium. 
     
     
         60 . The thin film structure of  claim 53 , wherein the cathode layer comprises vanadium oxide. 
     
     
         61 . The thin film structure of  claim 53 , wherein the cathode current collector layer comprises an electrically conductive metal.

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