Polishing method

Abstract

A polishing method is disclosed, which includes: conditioning a polishing pad, after polishing metal material of a previous wafer; spraying organic acid solution to the polishing pad; spraying deionized water to the polishing pad; performing a water-removing treatment on the polishing pad; and spraying polishing liquid to the polishing pad and polishing metal material of a next wafer. The method can prevent scratches on the surface of metal material of wafers and improve yield rate.

1 . A polishing method, comprising:
 conditioning a polishing pad, after polishing metal material of a previous wafer;   spraying organic acid solution to the polishing pad;   spraying deionized water to the polishing pad;   performing a water-removing treatment on the polishing pad; and   spraying polishing liquid to the polishing pad and polishing metal material of a next wafer.   
     
     
         2 . The polishing method of  claim 1 , wherein the conditioning of the polishing pad is pad ex-situ condition. 
     
     
         3 . The polishing method of  claim 1 , wherein the spraying organic acid solution to the polishing pad has a flow rate of 100˜1000 ml/min. 
     
     
         4 . The polishing method of  claim 3 , wherein during the spraying organic acid solution to the polishing pad, a platen has a rotation speed of 10˜150 RPM. 
     
     
         5 . The polishing method of  claim 1 , wherein the spraying deionized water to the polishing pad has a flow rate of 100˜1000 ml/min. 
     
     
         6 . The polishing method of  claim 5 , wherein during the spraying deionized water to the polishing pad, a platen has a rotation speed of 10˜120 RPM. 
     
     
         7 . The polishing method of  claim 1 , wherein the spraying polishing liquid to the polishing pad includes: polishing liquid covering the entire polishing pad. 
     
     
         8 . The polishing method of  claim 7 , wherein the spraying polishing liquid to the polishing pad has a flow rate of 100˜1500 ml/min and a spraying time of 5˜100 seconds. 
     
     
         9 . The polishing method of  claim 1 , wherein the organic acid is oxalic acid, malonic acid, succinic acid, maleic acid, phthalic acid or amino acid. 
     
     
         10 . The polishing method of  claim 1 , wherein the organic acid solution has a concentration of 0.01˜10 wt %. 
     
     
         11 . The polishing method of  claim 1 , wherein the metal material is aluminum or aluminum alloy.