Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

Abstract

Provided is a bottom gate type thin film transistor including on a substrate ( 1 ) a gate electrode ( 2 ), a first insulating film ( 3 ) as a gate insulating film, an oxide semiconductor layer ( 4 ) as a channel layer, a second insulating film ( 5 ) as a protective layer, a source electrode ( 6 ), and a drain electrode ( 7 ), in which the oxide semiconductor layer ( 4 ) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film ( 5 ) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer ( 4 ) and contains therein 3.8×10 19 molecules/cm 3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

1 - 9 . (canceled) 
     
     
         10 . A thin film transistor, comprising on a substrate:
 a gate electrode;   a first insulating film as a gate insulating film;   an oxide semiconductor layer as a channel layer;   a second insulating film as a protective layer;   a source electrode; and   a drain electrode,   wherein the oxide semiconductor layer comprises at least one of a Sn—In—Zn oxide, an In—Zn—Ga oxide, an In—Sn oxide, an In—Ga oxide, an In—Zn oxide, and an In oxide, and   wherein the second insulating film is formed so as to contain therein 3.8×10 19  molecules/cm 3  or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.   
     
     
         11 . The thin film transistor according to  claim 10 , wherein the at least one of the Sn—In—Zn oxide, the In—Zn—Ga oxide, the In—Sn oxide, the In—Ga oxide, the In—Zn oxide, and the In oxide is an amorphous oxide. 
     
     
         12 . The thin film transistor according to  claim 10 , wherein the oxide semiconductor layer comprises an amorphous oxide including In, Zn, and Ga. 
     
     
         13 . The thin film transistor according to  claim 10 , wherein the desorbed gas is observed as oxygen by temperature programmed desorption mass spectrometry in the case where the temperature of the surface of the substrate is heated from 50° C. to 800° C. 
     
     
         14 . The thin film transistor according to  claim 10 , wherein the second insulating film is formed using an oxide including at least one of Si and Al as a sputtering target, and a sputtering gas with an oxygen concentration of 10 vol % or more and 50 vol % or less. 
     
     
         15 . An apparatus, comprising:
 an electro-optical device having a pixel electrode; and   the thin film transistor according to  claim 10 ,   wherein the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.   
     
     
         16 . The apparatus according to  claim 15 , wherein the electro-optical device is an electroluminescence device. 
     
     
         17 . The apparatus according to  claim 15 , wherein the electro-optical device is a liquid crystal cell. 
     
     
         18 . The apparatus according to  claim 15 , wherein a plurality of the electro-optical devices and a plurality of the thin film transistors are arranged two-dimensionally on a substrate.