Method of manufacturing semiconductor device

Abstract

The method of manufacturing the semiconductor device comprises the steps of forming a MOS transistor 26 including a gate electrode 16 and source/drain diffused layers 24 formed in the silicon substrate 10 on both sides of the gate electrode 16 , forming a NiPt film 28 over the silicon substrate 10 , covering the gate electrode 16 and the source/drain diffused layers 26 , making thermal processing to react the NiPt film 28 with the upper parts of the source/drain diffused layers 24 to form Ni(Pt)Si films 34 a, 34 b on the source/drain diffused layers 24 , and removing selectively the unreacted part of the NiPt film 28 using a chemical liquid of above 71° C. including 71° C. containing hydrogen peroxide and forming an oxide film on the surface of the Ni(Pt)Si films 34 a, 34 b.

1 . A method of manufacturing a semiconductor device comprising:
 forming a metal silicide film over a semiconductor substrate;   forming an inter-layer insulating film over the semiconductor substrate with the metal silicide film formed over;   forming an opening in the inter-layer insulating film down to the metal silicide film;   forming a Ti film in the opening by CVD using TiCl.sub.4 gas as a raw material gas;   forming a TiN film on the Ti film by MOCVD; and   burying a contact plug in the opening with a barrier metal formed of the Ti film and the TiN film formed in.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of forming the TiN film, the TiN film is formed by MOCVD using tetrakis(dimethylamino)titanium as a raw material gas.   
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 the metal silicide film is formed on a source/drain diffused layer formed in the semiconductor substrate, and   the source/drain diffused layer includes a Si layer, a SiGe layer or a SiC layer.   
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 the metal silicide film comprises a nickel platinum monosilicide film, a nickel molybdenum monosilicide film, a nickel rhenium monosilicide film, a nickel tantalum monosilicide film, a nickel tungsten monosilicide film, a nickel platinum rhenium monosilicide film or a nickel monosilicide film.   
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of forming the Ti film, the Ti film is formed at a film forming temperature of below 650° C. including 650° C.   
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of forming the Ti film, the Ti film is formed by plasma CVD using TiCl 4  gas, H 2  gas and an inert gas as a raw material gas.   
     
     
         7 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of forming the TiN film, the TiN film is formed at a film forming temperature of 450° C. or below 450° C.   
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of forming the TiN film, the TiN film is formed in a 1-10 nm-thickness.   
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 the step of forming the TiN film comprises the steps of:   forming the TiN film of a 0.2-5 nm-thickness by MOCVD using tetrakis(dimethylamino)titanium gas as a raw material gas;   removing a compound containing carbon in the TiN film by a plasma processing using plasma of at least one or more gases of Ar gas, N 2  gas, H 2  gas, He gas and NH 3  gas.   
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 1 , wherein
 in the step of burying the contact plug, the contact plug of tungsten is buried.