Deposition source and organic layer deposition apparatus including the same

Abstract

A deposition source and an organic layer deposition apparatus that may be simply applied to the manufacture of large-sized display apparatuses on a mass scale and may prevent or substantially prevent deposition source nozzles from being blocked during deposition of a deposition material, thereby improving manufacturing yield and deposition efficiency. A deposition source includes a first deposition source including a plurality of first deposition source nozzles, and a second deposition source including a plurality of second deposition source nozzles wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other.

1 . A deposition source comprising:
 a first deposition source and a second deposition source arranged along a first direction;   a first deposition source nozzle unit at a side of the first deposition source and comprising a plurality of first deposition source nozzles arranged in the first direction;   a second deposition source nozzle unit at a side of the second deposition source and comprising a plurality of second deposition source nozzles arranged in the first direction;   a pair of first protruding reflectors arranged at opposite sides of the plurality of first deposition source nozzles, wherein the plurality of first deposition source nozzles are between the first protruding reflectors; and   a pair of second protruding reflectors arranged at opposite sides of the plurality of second deposition source nozzles, wherein the plurality of second deposition source nozzles are between the second protruding reflectors,   wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other.   
     
     
         2 . The deposition source of  claim 1 , wherein a host material is discharged from the first deposition source and a dopant material is discharged from the second deposition source. 
     
     
         3 . The deposition source of  claim 1 , further comprising a third protruding reflector connecting one end of one of the first protruding reflectors and one end of the other of the first protruding reflectors. 
     
     
         4 . The deposition source of  claim 3 , wherein the one end of the one of the first protruding reflectors and the one end of the other of the first protruding reflectors are adjacent to the second deposition source. 
     
     
         5 . The deposition source of  claim 1 , further comprising a fourth protruding reflector connecting one end of one of the second protruding reflectors and one end of the other of the second protruding reflectors. 
     
     
         6 . The deposition source of  claim 5 , wherein the one end of the one of the second protruding reflectors and the one end of the other of the second protruding reflectors are adjacent to the first deposition source. 
     
     
         7 . The deposition source of  claim 1 , wherein heights of the first protruding reflectors are greater than or equal to heights of the first deposition source nozzles. 
     
     
         8 . The deposition source of  claim 1 , wherein heights of the second protruding reflectors are greater than or equal to heights of the second deposition source nozzles. 
     
     
         9 . The deposition source of  claim 1 , wherein a deposition source nozzle closest to the second deposition source from among the plurality of first deposition source nozzles is a dummy nozzle and does not have an aperture therein, such that a deposition material contained in the first deposition source is not dischargeable through the dummy nozzle. 
     
     
         10 . The deposition source of  claim 1 , wherein a deposition source nozzle closest to the first deposition source from among the plurality of second deposition source nozzles is a dummy nozzle and does not have an aperture therein, such that a deposition material contained in the second deposition source is not dischargeable through the dummy nozzle. 
     
     
         11 . An organic layer deposition apparatus for forming a thin film on a substrate, the apparatus comprising:
 a deposition source for discharging a deposition material;   a deposition source nozzle unit at a side of the deposition source and comprising a plurality of deposition source nozzles arranged in a first direction; and   a patterning slit sheet opposite the deposition source nozzle unit and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction,   wherein the substrate is movable relative to the organic layer deposition apparatus in the first direction for performing deposition,   wherein the deposition source comprises a first deposition source and a second deposition source for discharging different materials, and   wherein the deposition source nozzle unit comprises:
 a first deposition source nozzle unit at a side of the first deposition source and comprising a plurality of first deposition source nozzles arranged in the first direction; and 
 a second deposition source nozzle unit at a side of the second deposition source and comprising a plurality of second deposition source nozzles arranged in the first direction, 
 wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted at a predetermined angle. 
   
     
     
         12 . The apparatus of  claim 11 , wherein a host material is discharged from the first deposition source, and a dopant material is discharged from the second deposition source. 
     
     
         13 . The apparatus of  claim 11 , wherein the first and second deposition sources are arranged along the first direction. 
     
     
         14 . The apparatus of  claim 11 , wherein the first deposition source nozzle unit further comprises a first protruding reflector and a second protruding reflector arranged at opposite sides of the plurality of first deposition source nozzles, wherein the plurality of first deposition source nozzles are between the first and second protruding reflectors. 
     
     
         15 . The apparatus of  claim 14 , further comprising a third protruding reflector connecting one end of the first protruding reflector and one end of the second protruding reflector. 
     
     
         16 . The apparatus of  claim 15 , wherein the one end of the first protruding reflector and the one end of the second protruding reflector are adjacent to the second deposition source. 
     
     
         17 . The apparatus of  claim 14 , wherein heights of the first and second protruding reflectors are greater than or equal to heights of the first deposition source nozzles. 
     
     
         18 . The apparatus of  claim 14 , wherein a deposition source nozzle closest to the second deposition source from among the plurality of first deposition source nozzles is a dummy nozzle and does not have an aperture therein, such that a deposition material contained in the first deposition source is not dischargeable through the dummy nozzle. 
     
     
         19 . The apparatus of  claim 11 , wherein the second deposition source nozzle unit further comprises a fourth protruding reflector and a fifth protruding reflector arranged at opposite sides of the plurality of second deposition source nozzles, wherein the plurality of second deposition source nozzles are between the fourth and fifth protruding reflectors. 
     
     
         20 . The apparatus of  claim 19 , further comprising a sixth protruding reflector connecting one end of the fourth protruding reflector and one end of the fifth protruding reflector. 
     
     
         21 . The apparatus of  claim 20 , wherein the one end of the fourth protruding reflector and the one end of the fifth protruding reflector are adjacent to the first deposition source. 
     
     
         22 . The apparatus of  claim 19 , wherein heights of the fourth and fifth protruding reflectors are greater than or equal to heights of the second deposition source nozzles. 
     
     
         23 . The apparatus of  claim 19 , wherein a deposition source nozzle closest to the first deposition source from among the plurality of second deposition source nozzles is a dummy nozzle and does not have an aperture therein, such that a deposition material contained in the second deposition source is not dischargeable through the dummy nozzle. 
     
     
         24 . The apparatus of  claim 11 , wherein the deposition source, the deposition source nozzle unit, and the patterning slit sheet are formed as one body. 
     
     
         25 . The apparatus of  claim 11 , further comprising at least one connection member connected between the deposition source nozzle unit and the patterning slit sheet, the at least one connection member being configured to guide movement of the deposition material. 
     
     
         26 . The apparatus of  claim 25 , wherein the at least one connection member is formed to seal a space between the deposition source, the deposition source nozzle unit, and the patterning slit sheet. 
     
     
         27 . The apparatus of  claim 11 , wherein the apparatus is spaced apart from the substrate by a distance. 
     
     
         28 . The apparatus of  claim 11 , wherein the deposition material is continuously deposited on the substrate while the substrate is moved relative to the apparatus in the first direction. 
     
     
         29 . The apparatus of  claim 11 , wherein the patterning slit sheet is smaller than the substrate. 
     
     
         30 . The apparatus of  claim 11 , wherein at least one portion of a host material discharged from the first deposition source is mixed with at least one portion of a dopant material discharged from the second deposition source. 
     
     
         31 . The apparatus of  claim 11 , wherein the first and second deposition sources are arranged in the first direction to be parallel with each other. 
     
     
         32 . The apparatus of  claim 11 , wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted to face each other. 
     
     
         33 . The apparatus of  claim 11 , wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted in such a manner that a mixture ratio of a host material discharged from the first deposition source and a dopant material discharged from the second deposition source is maintained constant throughout the entire substrate. 
     
     
         34 . The apparatus of  claim 11 , wherein the first and second deposition sources are linear deposition sources. 
     
     
         35 . The organic layer deposition apparatus of  claim 11 , wherein lower end portions of deposition source nozzles of at least one of the plurality of first deposition source nozzles or the plurality of second deposition source nozzles have a curved surface.