US2012177815A1PendingUtilityA1

Sputtered Piezoelectric Material

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Assignee: LI YOUMINGPriority: Feb 26, 2009Filed: Mar 20, 2012Published: Jul 12, 2012
Est. expiryFeb 26, 2029(~2.6 yrs left)· nominal 20-yr term from priority
Y10T29/42B41J 2/161B41J 2/1642B41J 2/1646B41J 2/14233C23C 14/34H10N 30/2047H10N 30/8554H10N 30/076H10N 30/708
47
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Claims

Abstract

Piezoelectric actuators having a composition of Pb 1.00+x (Zr 0.52 Ti 0.48 ) 1.00−y O 3 Nb y , where x>−0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Claims

exact text as granted — not AI-modified
1 . A method of forming a piezoelectric material, comprising:
 biasing a ceramic target comprising a ceramic body having a composition of Pb 1.00+x (Zr 0.52 Ti 0.48 ) 1.00−y O 3 Nb y , where −0.1≦x≦0.30 and 0<y≦0.2, wherein the target is in a chamber;   heating a support in the chamber to above 450° C.;   supporting a deposition surface on the support; and   introducing an inert and a reactive gas into the chamber to cause ceramic material from the ceramic target to be deposited onto the deposition surface to form the piezoelectric material.   
     
     
         2 . The method of  claim 1 , further comprising applying a seed layer to the deposition surface prior to depositing the ceramic material on the deposition surface. 
     
     
         3 . The method of  claim 2 , wherein the seed layer has film surface with a (111) crystal orientation. 
     
     
         4 . The method of  claim 3 , wherein the seed layer includes iridium. 
     
     
         5 . The method of  claim 3 , wherein the seed layer includes iridium oxide. 
     
     
         6 . The method of  claim 3 , wherein the piezoelectric material deposited formed on the deposition surface has a greater percentage of (100) crystal orientation surface than (111) crystal orientation surface. 
     
     
         7 . The method of  claim 2 , further comprising applying an adhesive layer on the deposition surface prior to applying the seed layer. 
     
     
         8 . The method of  claim 1 , further comprising after forming the piezoelectric material, applying an electrode on the piezoelectric material. 
     
     
         9 . The method of  claim 8 , wherein the electrode includes platinum. 
     
     
         10 . The method of  claim 1 , wherein 0.08≦y. 
     
     
         11 . The method of  claim 1 , wherein −0.01≦x≦0.15 and 0<y≦0.15. 
     
     
         12 . The method of  claim 1 , wherein 0≦x≦0.05 and 0.08<y≦0.13.

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