Semiconductor light emitting device and method for manufacturing same

Abstract

A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.

1 . A method for manufacturing a semiconductor light emitting device, comprising:
 forming a first electrode on a first major surface of a substrate including the first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface;   making a connection hole in the substrate at the recess to communicate between the first major surface and the second major surface;   forming a second electrode in the connection hole and on the second major surface;   electrically connecting the first electrode and the second electrode; and   mounting a semiconductor light emitting element on the first electrode.   
     
     
         2 . The method according to  claim 1 , further comprising grinding the second major surface of the substrate to make the substrate thin prior to making the connection hole. 
     
     
         3 . The method according to  claim 1 , wherein the semiconductor light emitting element is formed on a light emitting element substrate and the semiconductor light emitting element is mounted on the first electrode with the light emitting element substrate attached on the light emitting element. 
     
     
         4 . The method according to  claim 3 , wherein the light emitting element substrate is removed after mounting the semiconductor light emitting element. 
     
     
         5 . A method for manufacturing a semiconductor light emitting device, comprising:
 forming a first electrode on a first major surface of a substrate;   making a connection hole in the substrate to communicate from the first major surface to a second major surface, the second major surface being on a side opposite to the first major surface;   forming a second electrode in the connection hole and on the second major surface;   electrically connecting the first electrode and the second electrode;   mounting a semiconductor light emitting element on the first electrode;   forming a sacrificial layer to cover the semiconductor light emitting element;   forming a reinforcing film on the sacrificial layer;   removing the sacrificial layer via an opening made in the reinforcing film to make a gap between the semiconductor light emitting element and the reinforcing film;   forming a fluorescent material on the reinforcing film; and   performing heat treatment to reform the fluorescent material.   
     
     
         6 . The method according to  claim 5 , wherein the heat treatment includes laser irradiation of the fluorescent material from a top surface side of the fluorescent material. 
     
     
         7 . The method according to  claim 5 , further comprising grinding the second major surface of the substrate to make the substrate thin prior to making the connection hole. 
     
     
         8 . The method according to  claim 5 , wherein the semiconductor light emitting element is formed on a light emitting element substrate and the semiconductor light emitting element is mounted on the first electrode with the light emitting element substrate attached on the light emitting element. 
     
     
         9 . The method according to  claim 8 , wherein the light emitting element substrate is removed after mounting the semiconductor light emitting element. 
     
     
         10 . The method according to  claim 5 , further comprising forming a protrusion and a recess on the first major surface of the substrate prior to forming the first electrode, the first electrode being formed on the protrusion. 
     
     
         11 . The method according to  claim 10 , wherein the connection hole is formed from the second major surface of the substrate to reach the recess of the first major surface.