US2012183006A1PendingUtilityA1
Optical device, laser beam source, laser apparatus and method of producing optical device
Est. expiryJun 2, 2015(expired)· nominal 20-yr term from priority
H01S 3/09415G02F 1/3775H01S 3/109H01S 5/02H01S 5/0092G02F 1/3558G02F 2203/60H01S 3/23H01S 5/4087H01S 5/40G02F 1/37
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Abstract
After forming domain inverted layers 3 in an LiTaO 3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
Claims
exact text as granted — not AI-modified1 . A laser device, comprising:
at least one laser light source including a semiconductor laser; a first optical system for irradiating a spatial modulation element with laser light emitted from the laser light source; and a second optical system for irradiating a screen with the light emitted from the spatial modulation element, wherein the laser light source further includes: a fiber for conveying laser light from the semiconductor laser; a solid state laser crystal for receiving laser light from the fiber and generating a fundamental wave; and a bulk type optical wavelength conversion element in which periodic domain inverted structures are formed, the optical wavelength conversion element receiving the fundamental wave and generating a harmonic wave, wherein the fiber is configured to prevent a variation in temperature of the optical wavelength conversion element caused by a heat generated from the semiconductor laser.
2 . A laser device according to claim 1 , wherein the spatial modulation element is a liquid crystal cell.
3 . A laser device according to claim 1 , wherein the semiconductor laser is wavelength-locked.
4 . A laser device according to claim 3 , wherein wavelength-locking is performed using a grating or a filter.Cited by (0)
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