Wavelength conversion plate and light emitting device using the same

Abstract

Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light.

1 - 15 . (canceled) 
     
     
         16 . A wavelength conversion plate comprising:
 a dielectric layer having a planar upper surface and a nano pattern formed in a cylindrical shape with a curved bottom, wherein the nano pattern comprises a plurality of nano scale grooves;   a metal layer formed on an inside wall of the nano scale grooves of the nano pattern; and   a wavelength conversion layer formed on the metal layer and comprising quantum dots or phosphors which wave length-convert excited light to generate wavelength-converted light.   
     
     
         17 . The wavelength conversion plate of  claim 16 , wherein the dielectric layer comprises a polymer resin or a metal oxide. 
     
     
         18 . The wavelength conversion plate of  claim 17 , wherein the polymer resin comprises poly methyl methacrylate (PMMA), poly lauryl methacrylate (PLMA), or polystyrene. 
     
     
         19 . The wavelength conversion plate of  claim 17 , wherein the metal oxide comprises SiO 2  or TiO 2 . 
     
     
         20 . The wavelength conversion plate of  claim 16 , wherein the metal layer comprises any one of Au, Ag, Al, Cu, Pt, Pd, and alloys thereof. 
     
     
         21 . The wavelength conversion plate of  claim 16 , wherein the quantum dot comprises any one of an Si nanocrystal, a group II-VI compound semiconductor nanocrystal, a group III-V compound semiconductor nanocrystal, a group IV-VI compound semiconductor nanocrystal, and compounds thereof. 
     
     
         22 . The wavelength conversion plate of  claim 21 , wherein the group II-VI compound semiconductor nanocrystal comprises any one material selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. 
     
     
         23 . The wavelength conversion plate of  claim 21 , wherein the group III-V compound semiconductor nanocrystal comprises any one material selected from the group consisting of GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAa, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlP, GaAlNAs, GaAIPAs, GaInNP, GaInAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs. 
     
     
         24 . The wavelength conversion plate of  claim 21 , wherein the group IV-VI compound semiconductor nanocrystal comprises SbTe. 
     
     
         25 . The wavelength conversion plate of  claim 16 , wherein the dielectric layer is formed by using an Anodic Aluminum Oxide template. 
     
     
         26 . A method of manufacturing a wavelength conversion plate comprising:
 forming a nano pattern in a dielectric layer, wherein the nano pattern comprises a plurality of nano scale grooves and is formed in a cylindrical shape with a curved bottom;   forming a metal layer on an inside wall of the nano scale grooves of the nano pattern; and   forming a wavelength conversion layer comprising quantum dots or phosphors which wave length-convert excited to generate wave length-converted light, on the metal layer.   
     
     
         27 . The method of  claim 26 , wherein the dielectric layer comprises a polymer resin or a metal oxide. 
     
     
         28 . The method of  claim 27 , wherein the polymer resin comprises poly methyl methacrylate (PMMA), poly lauryl methacrylate (PLMA), or polystyrene. 
     
     
         29 . The method of  claim 27 , wherein the metal oxide comprises SiO 2  or TiO 2 . 
     
     
         30 . The method of  claim 26 , wherein the metal layer comprises any one of Au, Ag, Al, Cu, Pt, Pd, and alloys thereof. 
     
     
         31 . The method of  claim 26 , wherein the quantum dot comprises any one of an Si nanocrystal, a group II-VI compound semiconductor nanocrystal, a group III-V compound semiconductor nanocrystal, a group IV-VI compound semiconductor nanocrystal, and compounds thereof. 
     
     
         32 . The method of  claim 31 , wherein the group II-VI compound semiconductor nanocrystal comprises any one material selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. 
     
     
         33 . The method of  claim 31 , wherein the group III-V compound semiconductor nanocrystal comprises any one material selected from the group consisting of GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAa, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlP, GaAlNAs, GaAIPAs, GaInNP, GaInAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs. 
     
     
         34 . The method of  claim 31 , wherein the group IV-VI compound semiconductor nanocrystal comprises SbTe. 
     
     
         35 . The method of  claim 26 , wherein the dielectric layer is formed by using an Anodic Aluminum Oxide template.